Controlled synthesis of MoₓW₁₋ₓTe₂ atomic layers with emergent quantum states

Recently, new states of matter like superconducting or topological quantum states were found in transition metal dichalcogenides (TMDs) and manifested themselves in a series of exotic physical behaviors. Such phenomena have been demonstrated to exist in a series of transition metal tellurides includ...

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Main Authors: Deng, Ya, Li, Peiling, Zhu, Chao, Zhou, Jiadong, Wang, Xiaowei, Cui, Jian, Yang, Xue, Tao, Li, Zeng, Qingsheng, Duan, Ruihuan, Fu, Qundong, Xu, Jianbin, Qu, Fanming, Yang, Changli, Jing, Xiunian, Lu, Li, Liu, Guangtong, Liu, Zheng
Other Authors: School of Materials Science and Engineering
Format: Article
Language:English
Published: 2022
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Online Access:https://hdl.handle.net/10356/156073
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-1560732023-07-14T16:05:00Z Controlled synthesis of MoₓW₁₋ₓTe₂ atomic layers with emergent quantum states Deng, Ya Li, Peiling Zhu, Chao Zhou, Jiadong Wang, Xiaowei Cui, Jian Yang, Xue Tao, Li Zeng, Qingsheng Duan, Ruihuan Fu, Qundong Zhu, Chao Xu, Jianbin Qu, Fanming Yang, Changli Jing, Xiunian Lu, Li Liu, Guangtong Liu, Zheng School of Materials Science and Engineering Engineering::Materials Transition Metal Dichalcogenides Chemical Vapor Deposition Recently, new states of matter like superconducting or topological quantum states were found in transition metal dichalcogenides (TMDs) and manifested themselves in a series of exotic physical behaviors. Such phenomena have been demonstrated to exist in a series of transition metal tellurides including MoTe2, WTe2, and alloyed MoxW1–xTe2. However, the behaviors in the alloy system have been rarely addressed due to their difficulty in obtaining atomic layers with controlled composition, albeit the alloy offers a great platform to tune the quantum states. Here, we report a facile CVD method to synthesize the MoxW1–xTe2 with controllable thickness and chemical composition ratios. The atomic structure of a monolayer MoxW1–xTe2 alloy was experimentally confirmed by scanning transmission electron microscopy. Importantly, two different transport behaviors including superconducting and Weyl semimetal states were observed in Mo-rich Mo0.8W0.2Te2 and W-rich Mo0.2W0.8Te2 samples, respectively. Our results show that the electrical properties of MoxW1–xTe2 can be tuned by controlling the chemical composition, demonstrating our controllable CVD growth method is an efficient strategy to manipulate the physical properties of TMDCs. Meanwhile, it provides a perspective on further comprehension and sheds light on the design of devices with topological multicomponent TMDC materials. Ministry of Education (MOE) Submitted/Accepted version Z.L. acknowledges support from the Singapore Ministry of Education AcRF Tier 3 Programme “Geometrical Quantum Materials” (MOE2018-T3-1-002). G.L. acknowledges support from the National Basic Research Program of China from the MOST (2016YFA0300601), the National Natural Science Foundation of China (11527806, 11874406 and 92065203), the Beijing Municipal Science & Technology Commission of China (Z191100007219008), the Beijing Academy of Quantum Information Sciences (Y18G08), the Strategic Priority Research Program of the Chinese Academy of Sciences (XDB33010300), and the Synergic Extreme Condition User Facility. 2022-04-11T06:35:44Z 2022-04-11T06:35:44Z 2021 Journal Article Deng, Y., Li, P., Zhu, C., Zhou, J., Wang, X., Cui, J., Yang, X., Tao, L., Zeng, Q., Duan, R., Fu, Q., Zhu, C., Xu, J., Qu, F., Yang, C., Jing, X., Lu, L., Liu, G. & Liu, Z. (2021). Controlled synthesis of MoₓW₁₋ₓTe₂ atomic layers with emergent quantum states. ACS Nano, 15(7), 11526-11534. https://dx.doi.org/10.1021/acsnano.1c01441 1936-0851 https://hdl.handle.net/10356/156073 10.1021/acsnano.1c01441 7 15 11526 11534 en MOE2018-T3-1-002 ACS Nano This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsnano.1c01441. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials
Transition Metal Dichalcogenides
Chemical Vapor Deposition
spellingShingle Engineering::Materials
Transition Metal Dichalcogenides
Chemical Vapor Deposition
Deng, Ya
Li, Peiling
Zhu, Chao
Zhou, Jiadong
Wang, Xiaowei
Cui, Jian
Yang, Xue
Tao, Li
Zeng, Qingsheng
Duan, Ruihuan
Fu, Qundong
Zhu, Chao
Xu, Jianbin
Qu, Fanming
Yang, Changli
Jing, Xiunian
Lu, Li
Liu, Guangtong
Liu, Zheng
Controlled synthesis of MoₓW₁₋ₓTe₂ atomic layers with emergent quantum states
description Recently, new states of matter like superconducting or topological quantum states were found in transition metal dichalcogenides (TMDs) and manifested themselves in a series of exotic physical behaviors. Such phenomena have been demonstrated to exist in a series of transition metal tellurides including MoTe2, WTe2, and alloyed MoxW1–xTe2. However, the behaviors in the alloy system have been rarely addressed due to their difficulty in obtaining atomic layers with controlled composition, albeit the alloy offers a great platform to tune the quantum states. Here, we report a facile CVD method to synthesize the MoxW1–xTe2 with controllable thickness and chemical composition ratios. The atomic structure of a monolayer MoxW1–xTe2 alloy was experimentally confirmed by scanning transmission electron microscopy. Importantly, two different transport behaviors including superconducting and Weyl semimetal states were observed in Mo-rich Mo0.8W0.2Te2 and W-rich Mo0.2W0.8Te2 samples, respectively. Our results show that the electrical properties of MoxW1–xTe2 can be tuned by controlling the chemical composition, demonstrating our controllable CVD growth method is an efficient strategy to manipulate the physical properties of TMDCs. Meanwhile, it provides a perspective on further comprehension and sheds light on the design of devices with topological multicomponent TMDC materials.
author2 School of Materials Science and Engineering
author_facet School of Materials Science and Engineering
Deng, Ya
Li, Peiling
Zhu, Chao
Zhou, Jiadong
Wang, Xiaowei
Cui, Jian
Yang, Xue
Tao, Li
Zeng, Qingsheng
Duan, Ruihuan
Fu, Qundong
Zhu, Chao
Xu, Jianbin
Qu, Fanming
Yang, Changli
Jing, Xiunian
Lu, Li
Liu, Guangtong
Liu, Zheng
format Article
author Deng, Ya
Li, Peiling
Zhu, Chao
Zhou, Jiadong
Wang, Xiaowei
Cui, Jian
Yang, Xue
Tao, Li
Zeng, Qingsheng
Duan, Ruihuan
Fu, Qundong
Zhu, Chao
Xu, Jianbin
Qu, Fanming
Yang, Changli
Jing, Xiunian
Lu, Li
Liu, Guangtong
Liu, Zheng
author_sort Deng, Ya
title Controlled synthesis of MoₓW₁₋ₓTe₂ atomic layers with emergent quantum states
title_short Controlled synthesis of MoₓW₁₋ₓTe₂ atomic layers with emergent quantum states
title_full Controlled synthesis of MoₓW₁₋ₓTe₂ atomic layers with emergent quantum states
title_fullStr Controlled synthesis of MoₓW₁₋ₓTe₂ atomic layers with emergent quantum states
title_full_unstemmed Controlled synthesis of MoₓW₁₋ₓTe₂ atomic layers with emergent quantum states
title_sort controlled synthesis of moₓw₁₋ₓte₂ atomic layers with emergent quantum states
publishDate 2022
url https://hdl.handle.net/10356/156073
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