Phase-pure two-dimensional FeₓGeTe₂ magnets with near-room-temperature Tc

Two-dimensional (2D) ferromagnets with out-of-plane (OOP) magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage density. However, a scalable approach to synthesize 2D magnets with OOP anisotropy directly on the...

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Main Authors: Nair, Govindan Kutty Rajendran, Zhang, Zhaowei, Hou, Fuchen, Abdelaziem, Ali, Xu, Xiaodong, Yang, Steve Wu Qing, Zhang, Nan, Li, Weiqi, Zhu, Chao, Wu, Yao, Heng, Weiling, Kang, Lixing, Salim, Teddy, Zhou, Jiadong, Ke, Lin, Lin, Junhao, Li, Xingji, Gao, Weibo, Liu, Zheng
Other Authors: School of Materials Science and Engineering
Format: Article
Language:English
Published: 2022
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Online Access:https://hdl.handle.net/10356/156077
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-1560772023-02-28T20:03:30Z Phase-pure two-dimensional FeₓGeTe₂ magnets with near-room-temperature Tc Nair, Govindan Kutty Rajendran Zhang, Zhaowei Hou, Fuchen Abdelaziem, Ali Xu, Xiaodong Yang, Steve Wu Qing Zhang, Nan Li, Weiqi Zhu, Chao Wu, Yao Heng, Weiling Kang, Lixing Salim, Teddy Zhou, Jiadong Ke, Lin Lin, Junhao Li, Xingji Gao, Weibo Liu, Zheng School of Materials Science and Engineering School of Physical and Mathematical Sciences School of Electrical and Electronic Engineering Institute of Materials Research and Engineering, A*STAR CNRS International NTU THALES Research Alliances Engineering::Materials van der Waals Ferromagnetism Two-dimensional (2D) ferromagnets with out-of-plane (OOP) magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage density. However, a scalable approach to synthesize 2D magnets with OOP anisotropy directly on the complimentary metal-oxide semiconductor (CMOS) compatible substrates has not yet been mainly explored, which hinders the practical application of 2D magnets. This work demonstrates a cascaded space confined chemical vapor deposition (CS-CVD) technique to synthesize 2D FexGeTe2 ferromagnets. The weight fraction of iron (Fe) in the precursor controls the phase purity of the as-grown FexGeTe2. As a result, high-quality Fe3GeTe2 and Fe5GeTe2 flakes have been grown selectively using the CS-CVD technique. Curie temperature (TC) of the as-grown FexGeTe2 can be up to ∼ 280 K, nearly room temperature. The thickness and temperature-dependent magnetic studies on the Fe5GeTe2 reveal a 2D Ising to 3D XY behavior. Also, Terahertz spectroscopy experiments on Fe5GeTe2 display the highest conductivity among other FexGeTe2 2D magnets. The results of this work indicate a scalable pathway for the direct growth and integration of 2D ternary magnets on CMOS-based substrates to develop spintronic memory devices. [Figure not available: see fulltext.]. Ministry of Education (MOE) National Research Foundation (NRF) Submitted/Accepted version This work was supported from National Research Foundation Singapore programme NRF-CRP22-2019-0007, NRF-CRP22- 2019-0004 and NRF-CRP21-2018-0007. This work was also supported by the Ministry of Education, Singapore, under its AcRF Tier 3 Programme ‘Geometrical Quantum Materials’ (MOE2018-T3-1-002), AcRF Tier 2 (MOE2019-T2-2-105) and AcRF Tier 1 RG4/17 and RG7/18. We also thank the funding support from National Research foundation (NRF-CRP22- 2019-0004). 2022-04-13T08:52:08Z 2022-04-13T08:52:08Z 2022 Journal Article Nair, G. K. R., Zhang, Z., Hou, F., Abdelaziem, A., Xu, X., Yang, S. W. Q., Zhang, N., Li, W., Zhu, C., Wu, Y., Heng, W., Kang, L., Salim, T., Zhou, J., Ke, L., Lin, J., Li, X., Gao, W. & Liu, Z. (2022). Phase-pure two-dimensional FeₓGeTe₂ magnets with near-room-temperature Tc. Nano Research, 15(1), 457-464. https://dx.doi.org/10.1007/s12274-021-3502-0 1998-0124 https://hdl.handle.net/10356/156077 10.1007/s12274-021-3502-0 2-s2.0-85107590109 1 15 457 464 en NRF-CRP22-2019-0007 NRF-CRP22- 2019-0004 NRF-CRP21-2018-0007 MOE2018-T3-1-002 MOE2019-T2-2-105 RG4/17 RG7/18 Nano Research © 2021 Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature. All rights reserved. This paper was published in Nano Research and is made available with permission of Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials
van der Waals
Ferromagnetism
spellingShingle Engineering::Materials
van der Waals
Ferromagnetism
Nair, Govindan Kutty Rajendran
Zhang, Zhaowei
Hou, Fuchen
Abdelaziem, Ali
Xu, Xiaodong
Yang, Steve Wu Qing
Zhang, Nan
Li, Weiqi
Zhu, Chao
Wu, Yao
Heng, Weiling
Kang, Lixing
Salim, Teddy
Zhou, Jiadong
Ke, Lin
Lin, Junhao
Li, Xingji
Gao, Weibo
Liu, Zheng
Phase-pure two-dimensional FeₓGeTe₂ magnets with near-room-temperature Tc
description Two-dimensional (2D) ferromagnets with out-of-plane (OOP) magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage density. However, a scalable approach to synthesize 2D magnets with OOP anisotropy directly on the complimentary metal-oxide semiconductor (CMOS) compatible substrates has not yet been mainly explored, which hinders the practical application of 2D magnets. This work demonstrates a cascaded space confined chemical vapor deposition (CS-CVD) technique to synthesize 2D FexGeTe2 ferromagnets. The weight fraction of iron (Fe) in the precursor controls the phase purity of the as-grown FexGeTe2. As a result, high-quality Fe3GeTe2 and Fe5GeTe2 flakes have been grown selectively using the CS-CVD technique. Curie temperature (TC) of the as-grown FexGeTe2 can be up to ∼ 280 K, nearly room temperature. The thickness and temperature-dependent magnetic studies on the Fe5GeTe2 reveal a 2D Ising to 3D XY behavior. Also, Terahertz spectroscopy experiments on Fe5GeTe2 display the highest conductivity among other FexGeTe2 2D magnets. The results of this work indicate a scalable pathway for the direct growth and integration of 2D ternary magnets on CMOS-based substrates to develop spintronic memory devices. [Figure not available: see fulltext.].
author2 School of Materials Science and Engineering
author_facet School of Materials Science and Engineering
Nair, Govindan Kutty Rajendran
Zhang, Zhaowei
Hou, Fuchen
Abdelaziem, Ali
Xu, Xiaodong
Yang, Steve Wu Qing
Zhang, Nan
Li, Weiqi
Zhu, Chao
Wu, Yao
Heng, Weiling
Kang, Lixing
Salim, Teddy
Zhou, Jiadong
Ke, Lin
Lin, Junhao
Li, Xingji
Gao, Weibo
Liu, Zheng
format Article
author Nair, Govindan Kutty Rajendran
Zhang, Zhaowei
Hou, Fuchen
Abdelaziem, Ali
Xu, Xiaodong
Yang, Steve Wu Qing
Zhang, Nan
Li, Weiqi
Zhu, Chao
Wu, Yao
Heng, Weiling
Kang, Lixing
Salim, Teddy
Zhou, Jiadong
Ke, Lin
Lin, Junhao
Li, Xingji
Gao, Weibo
Liu, Zheng
author_sort Nair, Govindan Kutty Rajendran
title Phase-pure two-dimensional FeₓGeTe₂ magnets with near-room-temperature Tc
title_short Phase-pure two-dimensional FeₓGeTe₂ magnets with near-room-temperature Tc
title_full Phase-pure two-dimensional FeₓGeTe₂ magnets with near-room-temperature Tc
title_fullStr Phase-pure two-dimensional FeₓGeTe₂ magnets with near-room-temperature Tc
title_full_unstemmed Phase-pure two-dimensional FeₓGeTe₂ magnets with near-room-temperature Tc
title_sort phase-pure two-dimensional feₓgete₂ magnets with near-room-temperature tc
publishDate 2022
url https://hdl.handle.net/10356/156077
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