Controlled growth of ultrathin ferromagnetic β‐MnSe semiconductor

Two-dimensional (2D) magnetic crystals with intrinsic ferromagnetism are highly desirable for novel spin-electronic devices. However, the controllable synthesis of 2D magnets, especially the direct growth of 2D magnets on substrate surfaces, is still a challenge. Here, we demonstrate the synthesis o...

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Main Authors: Zou, Jingyun, Yang, Yumeng, Hu, Dianyi, Kang, Lixing, Zhu, Chao, Tian, Dan, Lv, Xiaodong, Kutty, Govindan, Guo, Yuxi, Xu, Manzhang, Li, Fengyu, Hong, Guo, Liu, Zheng
Other Authors: School of Materials Science and Engineering
Format: Article
Language:English
Published: 2022
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Online Access:https://hdl.handle.net/10356/156078
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1560782023-07-14T16:04:57Z Controlled growth of ultrathin ferromagnetic β‐MnSe semiconductor Zou, Jingyun Yang, Yumeng Hu, Dianyi Kang, Lixing Zhu, Chao Tian, Dan Lv, Xiaodong Kutty, Govindan Guo, Yuxi Xu, Manzhang Li, Fengyu Hong, Guo Liu, Zheng School of Materials Science and Engineering Engineering::Materials 2D Ferromagnetism Controllable Growth Manganese Selenide Two-dimensional (2D) magnetic crystals with intrinsic ferromagnetism are highly desirable for novel spin-electronic devices. However, the controllable synthesis of 2D magnets, especially the direct growth of 2D magnets on substrate surfaces, is still a challenge. Here, we demonstrate the synthesis of ultrathin zinc-blende phase manganese selenide (β-MnSe) nanosheets using the chemical vapor deposition (CVD) technique. The 2D β-MnSe crystals exhibit distinct ferromagnetic properties with a Curie temperature of 42.3 K. Density functional theory (DFT) calculations suggest that the ferromagnetic order in β-MnSe originates from the exchange coupling between the unsaturated Se and Mn atoms. This study presents significant progress in the CVD growth of ultrathin 2D magnetic materials by thinning bulk magnets, and it will pave the way for the building of energy-efficient spintronic devices in the future. Ministry of Education (MOE) National Research Foundation (NRF) Published version This study was supported by the National Research Foundation–Competitive Research Program of Singapore (Nos. NRF-CRP21-2018-0007, CRP22-2019-0060, and NRF2017-ANR002 2DPS); MOE Tier 2 (No. MOE2017-T2-2-136) and Tier 3 (No. MOE2018-T3-1-002); National Natural Science Foundation of China (Nos. 11828401, 11964024, and 21971113); Startup Project of Inner Mongolia University (No. 21200-5175101); Fund of University of Macau (Nos. MYRG2018-00079-IAPME and MYRG2019-00115-IAPME); Science and Technology Development Fund of Macau SAR (Nos. FDCT0059/2018/A2 and FDCT009/2017/AMJ); Fund of Shenzhen Science and Technology Innovation Committee (No. SGDX20201103093600003); Shanghai Pujiang Program (No. 20PJ1411500). 2022-04-05T02:24:40Z 2022-04-05T02:24:40Z 2022 Journal Article Zou, J., Yang, Y., Hu, D., Kang, L., Zhu, C., Tian, D., Lv, X., Kutty, G., Guo, Y., Xu, M., Li, F., Hong, G. & Liu, Z. (2022). Controlled growth of ultrathin ferromagnetic β‐MnSe semiconductor. SmartMat. https://dx.doi.org/10.1002/smm2.1084 2688-819X https://hdl.handle.net/10356/156078 10.1002/smm2.1084 en NRF‐CRP21‐2018‐0007 CRP22‐2019‐0060 NRF2017‐ANR002 2DPS MOE2017‐T2‐2‐136 MOE2018‐T3‐1‐002 SmartMat © 2022 The Authors. SmartMat published by Tianjin University and John Wiley & Sons Australia, Ltd. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials
2D Ferromagnetism
Controllable Growth
Manganese Selenide
spellingShingle Engineering::Materials
2D Ferromagnetism
Controllable Growth
Manganese Selenide
Zou, Jingyun
Yang, Yumeng
Hu, Dianyi
Kang, Lixing
Zhu, Chao
Tian, Dan
Lv, Xiaodong
Kutty, Govindan
Guo, Yuxi
Xu, Manzhang
Li, Fengyu
Hong, Guo
Liu, Zheng
Controlled growth of ultrathin ferromagnetic β‐MnSe semiconductor
description Two-dimensional (2D) magnetic crystals with intrinsic ferromagnetism are highly desirable for novel spin-electronic devices. However, the controllable synthesis of 2D magnets, especially the direct growth of 2D magnets on substrate surfaces, is still a challenge. Here, we demonstrate the synthesis of ultrathin zinc-blende phase manganese selenide (β-MnSe) nanosheets using the chemical vapor deposition (CVD) technique. The 2D β-MnSe crystals exhibit distinct ferromagnetic properties with a Curie temperature of 42.3 K. Density functional theory (DFT) calculations suggest that the ferromagnetic order in β-MnSe originates from the exchange coupling between the unsaturated Se and Mn atoms. This study presents significant progress in the CVD growth of ultrathin 2D magnetic materials by thinning bulk magnets, and it will pave the way for the building of energy-efficient spintronic devices in the future.
author2 School of Materials Science and Engineering
author_facet School of Materials Science and Engineering
Zou, Jingyun
Yang, Yumeng
Hu, Dianyi
Kang, Lixing
Zhu, Chao
Tian, Dan
Lv, Xiaodong
Kutty, Govindan
Guo, Yuxi
Xu, Manzhang
Li, Fengyu
Hong, Guo
Liu, Zheng
format Article
author Zou, Jingyun
Yang, Yumeng
Hu, Dianyi
Kang, Lixing
Zhu, Chao
Tian, Dan
Lv, Xiaodong
Kutty, Govindan
Guo, Yuxi
Xu, Manzhang
Li, Fengyu
Hong, Guo
Liu, Zheng
author_sort Zou, Jingyun
title Controlled growth of ultrathin ferromagnetic β‐MnSe semiconductor
title_short Controlled growth of ultrathin ferromagnetic β‐MnSe semiconductor
title_full Controlled growth of ultrathin ferromagnetic β‐MnSe semiconductor
title_fullStr Controlled growth of ultrathin ferromagnetic β‐MnSe semiconductor
title_full_unstemmed Controlled growth of ultrathin ferromagnetic β‐MnSe semiconductor
title_sort controlled growth of ultrathin ferromagnetic β‐mnse semiconductor
publishDate 2022
url https://hdl.handle.net/10356/156078
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