Printed metal oxide systems for high mobility thin film transistors

Printed metal oxide systems for high mobility thin film transistors

The primary aim of the project was the utilization of a direct printing system to fabricate metal oxide systems for thin film transistor (TFT) application. Metal oxide systems such as In2O3 and IZO were used due to excellent properties such as high transparency, low cost, high throughput manufactura...

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Main Author: Chua, Ran Zhi Tong
Other Authors: Nripan Mathews
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2022
Subjects:
Engineering::Materials
Online Access:https://hdl.handle.net/10356/156291
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1562912022-04-13T08:48:40Z Printed metal oxide systems for high mobility thin film transistors Chua, Ran Zhi Tong Nripan Mathews School of Materials Science and Engineering Nripan@ntu.edu.sg Engineering::Materials The primary aim of the project was the utilization of a direct printing system to fabricate metal oxide systems for thin film transistor (TFT) application. Metal oxide systems such as In2O3 and IZO were used due to excellent properties such as high transparency, low cost, high throughput manufacturability, good mobility, and compatibility with flexible substrates Bachelor of Engineering (Materials Engineering) 2022-04-11T08:28:35Z 2022-04-11T08:28:35Z 2022 Final Year Project (FYP) Chua, R. Z. T. (2022). Printed metal oxide systems for high mobility thin film transistors. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/156291 https://hdl.handle.net/10356/156291 en application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials
spellingShingle Engineering::Materials
Chua, Ran Zhi Tong
Printed metal oxide systems for high mobility thin film transistors
description The primary aim of the project was the utilization of a direct printing system to fabricate metal oxide systems for thin film transistor (TFT) application. Metal oxide systems such as In2O3 and IZO were used due to excellent properties such as high transparency, low cost, high throughput manufacturability, good mobility, and compatibility with flexible substrates
author2 Nripan Mathews
author_facet Nripan Mathews
Chua, Ran Zhi Tong
format Final Year Project
author Chua, Ran Zhi Tong
author_sort Chua, Ran Zhi Tong
title Printed metal oxide systems for high mobility thin film transistors
title_short Printed metal oxide systems for high mobility thin film transistors
title_full Printed metal oxide systems for high mobility thin film transistors
title_fullStr Printed metal oxide systems for high mobility thin film transistors
title_full_unstemmed Printed metal oxide systems for high mobility thin film transistors
title_sort printed metal oxide systems for high mobility thin film transistors
publisher Nanyang Technological University
publishDate 2022
url https://hdl.handle.net/10356/156291
_version_ 1731235779678568448

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