Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor

Nonlinear responses in transport measurements are linked to material properties not accessible at linear order1 because they follow distinct symmetry requirements2-5. While the linear Hall effect indicates time-reversal symmetry breaking, the second-order nonlinear Hall effect typically requires bro...

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Main Authors: Lai, Shen, Liu, Huiying, Zhang, Zhaowei, Zhao, Jianzhou, Feng, Xiaolong, Wang, Naizhou, Tang, Chaolong, Liu, Yuanda, Novoselov, K. S., Yang, Shengyuan A., Gao, Weibo
Other Authors: School of Physical and Mathematical Sciences
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Language:English
Published: 2022
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Online Access:https://hdl.handle.net/10356/156378
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-1563782023-02-28T20:05:42Z Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor Lai, Shen Liu, Huiying Zhang, Zhaowei Zhao, Jianzhou Feng, Xiaolong Wang, Naizhou Tang, Chaolong Liu, Yuanda Novoselov, K. S. Yang, Shengyuan A. Gao, Weibo School of Physical and Mathematical Sciences Centre for Disruptive Photonic Technologies (CDPT) The Photonics Institute Science::Physics Polarization Hall Effect Nonlinear responses in transport measurements are linked to material properties not accessible at linear order1 because they follow distinct symmetry requirements2-5. While the linear Hall effect indicates time-reversal symmetry breaking, the second-order nonlinear Hall effect typically requires broken inversion symmetry1. Recent experiments on ultrathin WTe2 demonstrated this connection between crystal structure and nonlinear response6,7. The observed second-order nonlinear Hall effect can probe the Berry curvature dipole, a band geometric property, in non-magnetic materials, just like the anomalous Hall effect probes the Berry curvature in magnetic materials8,9. Theory predicts that another intrinsic band geometric property, the Berry-connection polarizability tensor10, gives rise to higher-order signals, but it has not been probed experimentally. Here, we report a third-order nonlinear Hall effect in thick Td-MoTe2 samples. The third-order signal is found to be the dominant response over both the linear- and second-order ones. Angle-resolved measurements reveal that this feature results from crystal symmetry constraints. Temperature-dependent measurement shows that the third-order Hall response agrees with the Berry-connection polarizability contribution evaluated by first-principles calculations. The third-order nonlinear Hall effect provides a valuable probe for intriguing material properties that are not accessible at lower orders and may be employed for high-order-response electronic devices. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) National Research Foundation (NRF) Submitted/Accepted version We acknowledge financial support from the Singapore National Research Foundation through its Competitive Research Program (CRP award numbers NRF-CRP21-2018-0007, NRF-CRP22-2019-0004 and NRF-CRP23-2019-0002), the Singapore Ministry of Education (grant number MOE2016-T3-1-006 (S)) and the A*Star QTE programme. 2022-04-17T13:31:12Z 2022-04-17T13:31:12Z 2021 Journal Article Lai, S., Liu, H., Zhang, Z., Zhao, J., Feng, X., Wang, N., Tang, C., Liu, Y., Novoselov, K. S., Yang, S. A. & Gao, W. (2021). Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor. Nature Nanotechnology, 16(8), 869-873. https://dx.doi.org/10.1038/s41565-021-00917-0 1748-3387 https://hdl.handle.net/10356/156378 10.1038/s41565-021-00917-0 34168343 2-s2.0-85108664185 8 16 869 873 en NRF-CRP21-2018-0007 NRF-CRP22-2019-0004 NRF-CRP23-2019-0002 MOE2016-T3-1-006 (S) Nature Nanotechnology © 2021 The Author(s), under exclusive licence to Springer Nature Limited. All rights reserved. This paper was published in Nature Nanotechnology and is made available with permission of The Author(s). application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Science::Physics
Polarization
Hall Effect
spellingShingle Science::Physics
Polarization
Hall Effect
Lai, Shen
Liu, Huiying
Zhang, Zhaowei
Zhao, Jianzhou
Feng, Xiaolong
Wang, Naizhou
Tang, Chaolong
Liu, Yuanda
Novoselov, K. S.
Yang, Shengyuan A.
Gao, Weibo
Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor
description Nonlinear responses in transport measurements are linked to material properties not accessible at linear order1 because they follow distinct symmetry requirements2-5. While the linear Hall effect indicates time-reversal symmetry breaking, the second-order nonlinear Hall effect typically requires broken inversion symmetry1. Recent experiments on ultrathin WTe2 demonstrated this connection between crystal structure and nonlinear response6,7. The observed second-order nonlinear Hall effect can probe the Berry curvature dipole, a band geometric property, in non-magnetic materials, just like the anomalous Hall effect probes the Berry curvature in magnetic materials8,9. Theory predicts that another intrinsic band geometric property, the Berry-connection polarizability tensor10, gives rise to higher-order signals, but it has not been probed experimentally. Here, we report a third-order nonlinear Hall effect in thick Td-MoTe2 samples. The third-order signal is found to be the dominant response over both the linear- and second-order ones. Angle-resolved measurements reveal that this feature results from crystal symmetry constraints. Temperature-dependent measurement shows that the third-order Hall response agrees with the Berry-connection polarizability contribution evaluated by first-principles calculations. The third-order nonlinear Hall effect provides a valuable probe for intriguing material properties that are not accessible at lower orders and may be employed for high-order-response electronic devices.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Lai, Shen
Liu, Huiying
Zhang, Zhaowei
Zhao, Jianzhou
Feng, Xiaolong
Wang, Naizhou
Tang, Chaolong
Liu, Yuanda
Novoselov, K. S.
Yang, Shengyuan A.
Gao, Weibo
format Article
author Lai, Shen
Liu, Huiying
Zhang, Zhaowei
Zhao, Jianzhou
Feng, Xiaolong
Wang, Naizhou
Tang, Chaolong
Liu, Yuanda
Novoselov, K. S.
Yang, Shengyuan A.
Gao, Weibo
author_sort Lai, Shen
title Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor
title_short Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor
title_full Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor
title_fullStr Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor
title_full_unstemmed Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor
title_sort third-order nonlinear hall effect induced by the berry-connection polarizability tensor
publishDate 2022
url https://hdl.handle.net/10356/156378
_version_ 1759856226311602176