Conductive Bridge Random Access Memory (CBRAM): challenges and opportunities for memory and neuromorphic computing applications

• المؤلفون الرئيسيون: Abbas, Haider, Li, Jiayi, Ang, Diing Shenp
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Electrical and electronic engineering::Nanoelectronics; Engineering::Nanotechnology; Conductive Bridge Random Access Memory; Resistive Random Access Memory; Memristor; Emerging Memory Technologies; Neuromorphic Computing; Artificial Synapses; Artificial Neurons
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/157321

Due to a rapid increase in the amount of data, there is a huge demand for the development of new memory technologies as well as emerging computing systems for high-density memory storage and efficient computing. As the conventional transistor-based storage devices and computing systems are approachi...