Resisitive switching devices based on halide perovskites

In this Final Year Report, the fabrication of resistive switching devices and Silver Bismuth Iodide mixture will be researched and experimented on. The report will go on to describe in detail the steps taken to fabricate the film. There will be two different methods of spin coating, the first one be...

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Main Author: Hazirah Hassan
Other Authors: Ang Diing Shenp
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2022
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Online Access:https://hdl.handle.net/10356/157764
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1577642023-07-07T19:04:28Z Resisitive switching devices based on halide perovskites Hazirah Hassan Ang Diing Shenp School of Electrical and Electronic Engineering EDSAng@ntu.edu.sg Engineering::Electrical and electronic engineering::Semiconductors In this Final Year Report, the fabrication of resistive switching devices and Silver Bismuth Iodide mixture will be researched and experimented on. The report will go on to describe in detail the steps taken to fabricate the film. There will be two different methods of spin coating, the first one being Formic Acid not added deposited separately from the precursor solution while the second method will be Formic Acid added to the precursor solution before deposition on the substrate. Other factors such as ratio of Formic Acid to Precursor solution and Spin rate during spin coating is also discussed in the report. Bachelor of Engineering (Electrical and Electronic Engineering) 2022-05-23T04:25:26Z 2022-05-23T04:25:26Z 2022 Final Year Project (FYP) Hazirah Hassan (2022). Resisitive switching devices based on halide perovskites. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/157764 https://hdl.handle.net/10356/157764 en A2014-211 application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle Engineering::Electrical and electronic engineering::Semiconductors
Hazirah Hassan
Resisitive switching devices based on halide perovskites
description In this Final Year Report, the fabrication of resistive switching devices and Silver Bismuth Iodide mixture will be researched and experimented on. The report will go on to describe in detail the steps taken to fabricate the film. There will be two different methods of spin coating, the first one being Formic Acid not added deposited separately from the precursor solution while the second method will be Formic Acid added to the precursor solution before deposition on the substrate. Other factors such as ratio of Formic Acid to Precursor solution and Spin rate during spin coating is also discussed in the report.
author2 Ang Diing Shenp
author_facet Ang Diing Shenp
Hazirah Hassan
format Final Year Project
author Hazirah Hassan
author_sort Hazirah Hassan
title Resisitive switching devices based on halide perovskites
title_short Resisitive switching devices based on halide perovskites
title_full Resisitive switching devices based on halide perovskites
title_fullStr Resisitive switching devices based on halide perovskites
title_full_unstemmed Resisitive switching devices based on halide perovskites
title_sort resisitive switching devices based on halide perovskites
publisher Nanyang Technological University
publishDate 2022
url https://hdl.handle.net/10356/157764
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