Investigation of wide bandgap device (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor)

• Main Author: Chan, Matthew Nigel Zhen Yu
• Other Authors: Ali Iftekhar Maswood
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2022
• Subjects: Engineering::Electrical and electronic engineering::Electric power; Engineering::Electrical and electronic engineering::Electronic circuits
• Online Access: https://hdl.handle.net/10356/157979
• Institution: Nanyang Technological University

Attributed to its superlative wide bandgap properties, Silicon Carbide (SiC) has been the natural choice of material for the fabrication of high temperature, power and frequency semiconductor devices. When the material is processed to grow a layer of high-quality thermal oxide (Silicon Dioxide), the...