High figure of merit in Gallium-doped nanostructured n-type PbTe-xGeTe with midgap states

• Main Authors: Luo, Zhong-Zhen, Cai, Songting, Hao, Shiqiang, Bailey, Trevor P., Su, Xianli, Spanopoulos, Ioannis, Hadar, Ido, Tan, Gangjian, Luo, Yubo, Xu, Jianwei, Uher, Ctirad, Wolverton, Christopher, Dravid, Vinayak P., Yan, Qingyu, Kanatzidis, Mercouri G.
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Materials; Engineering::Materials::Functional materials; Doping; Electrical Conductivity
• Online Access: https://hdl.handle.net/10356/159048
• Institution: Nanyang Technological University

PbTe-based thermoelectric materials are some of the most promising for converting heat into electricity, but their n-type versions still lag in performance the p-type ones. Here, we introduce midgap states and nanoscale precipitates using Ga-doping and GeTe-alloying to considerably improve the perfo...