Thermoelectric performance of the 2D Bi₂Si₂Te₆ semiconductor

• المؤلفون الرئيسيون: Luo, Yubo, Ma, Zheng, Hao, Shiqiang, Cai, Songting, Luo, Zhong-Zhen, Wolverton, Christopher, Dravid, Vinayak P., Yang, Junyou, Yan, Qingyu, Kanatzidis, Mercouri G.
• مؤلفون آخرون: School of Materials Science and Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Science::Chemistry::Inorganic chemistry; Engineering::Materials; Thermal Conductivity; Bi₂Si₂Te₆
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/159223
• المؤسسة: Nanyang Technological University

Bi2Si2Te6, a 2D compound, is a direct band gap semiconductor with an optical band gap of 0.25 eV, and is a promising thermoelec-tric material. Single-phase Bi2Si2Te6 is prepared by a scalable ball-milling and annealing process and the highly densified polycrys-talline samples are prepared by spark p...