LTspice implementation of PKU compact model of metal-oxide-based RRAM: part C_simulation of RRAM memory arrays

• المؤلف الرئيسي: Du, Yifan
• مؤلفون آخرون: Chen Tupei
• التنسيق: Thesis-Master by Coursework
• اللغة: English
• منشور في: Nanyang Technological University 2022
• الموضوعات: Engineering::Electrical and electronic engineering::Electronic circuits
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/159456

RRAM, which has the characteristics of high speed, low power consumption, easy integration, compatibility with CMOS technology, is a potential NVM technology. It is considered as the next-generation high density storage and high-performance computing technology, and also, a powerful alternative of f...