Atomic layer deposition of palladium thin film from palladium (II) hexafluoroacetylacetonate and ozone reactant
Palladium thin films have been grown by thermal atomic layer (ALD) process using Palladium (II) hexafluoroacetylacetonate (Pd(hfac)2) and O3 as the precursors without molecular hydrogen or formalin in a temperature range of 180–220 °C. The palladium films were deposited on sapphire (α-Al2O3, (0001))...
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Main Authors: | , , , , , , , , |
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格式: | Article |
語言: | English |
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2022
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在線閱讀: | https://hdl.handle.net/10356/159583 |
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機構: | Nanyang Technological University |
語言: | English |