Atomic layer deposition of palladium thin film from palladium (II) hexafluoroacetylacetonate and ozone reactant

Palladium thin films have been grown by thermal atomic layer (ALD) process using Palladium (II) hexafluoroacetylacetonate (Pd(hfac)2) and O3 as the precursors without molecular hydrogen or formalin in a temperature range of 180–220 °C. The palladium films were deposited on sapphire (α-Al2O3, (0001))...

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Main Authors: Zou, Yiming, Li, Jiahui, Cheng, Chunyu, Wang, Zhiwei, Ong, Amanda Jiamin, Goei, Ronn, Li, Xianglin, Li, Shuzhou, Tok, Alfred Iing Yoong
其他作者: School of Materials Science and Engineering
格式: Article
語言:English
出版: 2022
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在線閱讀:https://hdl.handle.net/10356/159583
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機構: Nanyang Technological University
語言: English