Growth and characterization of PECVD growth CNTs and CNT networks

• Main Author: Tay, Roland Yingjie.
• Other Authors: Tay Beng Kang
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• Online Access: http://hdl.handle.net/10356/16001
• Institution: Nanyang Technological University

Aligned carbon nanotubes (ACNTs) were prepared by Plasma Enhance Chemical Vapor Deposition (PECVD). Acetylene (C2H2) was used as the carbon feedstock gas. The effects of temperature, pressure, processing gas flow rate and growth time on the growth of ACNTs using Nickel and Gold/Nickel as the catalyst on N++, P++, SiO2 and undoped substrates were systematically studied. For the catalysts of ACNTs growth, Nickel with 30nm in thickness and Gold with 50nm on top of Nickel with 30nm thickness were deposited onto the silicon substrates. Growth of ACNTs were monitored using SEM and its quality by Raman spectroscopy. The ACNTs were then used to grow networks which were prepared by PECVD. The samples were inverted and placed onto the stage. The effects of temperature, pressure, processing gas flow rate and growth time on the density of the networks were examined using SEM and analysis of its quality were done by Raman spectroscopy. Surface wettability characterization was done using goniometer to measure the contact angle of the DI water droplet. SEM images and Raman spectra results were use to observe the surface morphology and the quality of the CNTs.