Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

• المؤلفون الرئيسيون: Qiao, Zhongliang, Li, Xiang, Sia, Brian Jia Xu, Wang, Wanjun, Wang, Hong, Li, Zaijin, Zhao, Zhibin, Li, Lin, Gao, Xin, Bo, Baoxue, Qu, Yi, Liu, Guojin, Liu, Chongyang
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Electrical and electronic engineering; Quantum Well; Lasers
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/160432
• المؤسسة: Nanyang Technological University

Monolithic two-section InGaAs/GaAs double quantum well (DQW) passively mode-locked lasers (MLLs) with asymmetric waveguide, consisting of the layers of p-doped AlGaAs waveguide and no-doped InGaAsP waveguide, emitting at ~ 1.06 μm, with a fundamental repetition rate at ~ 19.56 GHz have been demonstr...