Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes

• المؤلفون الرئيسيون: Zeng, Zheng, Zhang, Xin, Blaabjerg, Frede, Miao, Linjing
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Electrical and electronic engineering; Impedance Modeling; Measurement Probes
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/160919

Due to the breakneck switching speed, SiC mosfet is extremely sensitive to parasitics in the power device, circuit layout, and also measurement probe. It is not clear how the parasitics of measurement probes affect the transient stability of SiC mosfet, and it poses an unsolved challenge for the ind...