Highly stable electronic properties of rippled antimonene under compressive deformation

Antimonene has attracted much attention for its high carrier mobility and suitable band gap for electronic, optoelectronic, and even spintronic devices. To tailor its properties for such applications, strain engineering may be adopted. However, such 2D crystals may prefer to exist in the rippled...

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Main Authors: Tian, Yujia, Kripalani, Devesh R., Xue, Ming, Li, Shaofan, Zhou, Kun
Other Authors: School of Mechanical and Aerospace Engineering
Format: Article
Language:English
Published: 2022
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Online Access:https://hdl.handle.net/10356/161007
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1610072022-08-11T07:05:07Z Highly stable electronic properties of rippled antimonene under compressive deformation Tian, Yujia Kripalani, Devesh R. Xue, Ming Li, Shaofan Zhou, Kun School of Mechanical and Aerospace Engineering Engineering::Mechanical engineering Density Functional Theory Energy Gap Antimonene has attracted much attention for its high carrier mobility and suitable band gap for electronic, optoelectronic, and even spintronic devices. To tailor its properties for such applications, strain engineering may be adopted. However, such 2D crystals may prefer to exist in the rippled form due to the instability of long-range orders, and rippling has been shown to have a contrasting, significant impact on the electronic properties of various 2D materials, which complicates the tuning process. Hence, the effects of rippling on the electronic properties of antimonene under strain are herein investigated by comparing antimonene in its rippled and flat forms. DFT calculations are performed to compute the structural and electronic parameters, where uniaxial compression of up to 7.5% is applied along the armchair and zigzag directions to study the anisotropic behavior of the material. Highly stable properties such as the work function and band gap are obtained for the rippled structures, where they are fully relaxed, regardless of the compression level, and these properties do not deviate much from those of the pristine structure under no strain. In contrast, various changes are observed in their flat counterparts. The mechanisms behind the different results are thoroughly explained by analyses of the density of states and structure geometry. The out-of-plane dipole moments of the rippled structures are also presented to give further insights into potential applications of rippled antimonene in sensors, actuators, triboelectric nanogenerators, etc. This work presents extensive data and thorough analysis on the effect of rippling on antimonene. The identification of optimal ripple amplitudes for which the electronic properties of the pristine condition can be recovered will be highly significant in guiding the rational design and architecture of antimonene-based devices. Economic Development Board (EDB) Published version This study was supported by the Economic Development Board - Singapore and Infineon Technologies Asia Pacific Pte Ltd through the Industrial Postgraduate Program with Nanyang Technological University 2022-08-11T07:05:07Z 2022-08-11T07:05:07Z 2022 Journal Article Tian, Y., Kripalani, D. R., Xue, M., Li, S. & Zhou, K. (2022). Highly stable electronic properties of rippled antimonene under compressive deformation. Physical Review B, 105(3), 035308-. https://dx.doi.org/10.1103/PhysRevB.105.035308 2469-9950 https://hdl.handle.net/10356/161007 10.1103/PhysRevB.105.035308 2-s2.0-85123752412 3 105 035308 en Physical Review B © 2022 American Physical Society. All rights reserved. This paper was published in Physical Review B and is made available with permission of American Physical Society. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Mechanical engineering
Density Functional Theory
Energy Gap
spellingShingle Engineering::Mechanical engineering
Density Functional Theory
Energy Gap
Tian, Yujia
Kripalani, Devesh R.
Xue, Ming
Li, Shaofan
Zhou, Kun
Highly stable electronic properties of rippled antimonene under compressive deformation
description Antimonene has attracted much attention for its high carrier mobility and suitable band gap for electronic, optoelectronic, and even spintronic devices. To tailor its properties for such applications, strain engineering may be adopted. However, such 2D crystals may prefer to exist in the rippled form due to the instability of long-range orders, and rippling has been shown to have a contrasting, significant impact on the electronic properties of various 2D materials, which complicates the tuning process. Hence, the effects of rippling on the electronic properties of antimonene under strain are herein investigated by comparing antimonene in its rippled and flat forms. DFT calculations are performed to compute the structural and electronic parameters, where uniaxial compression of up to 7.5% is applied along the armchair and zigzag directions to study the anisotropic behavior of the material. Highly stable properties such as the work function and band gap are obtained for the rippled structures, where they are fully relaxed, regardless of the compression level, and these properties do not deviate much from those of the pristine structure under no strain. In contrast, various changes are observed in their flat counterparts. The mechanisms behind the different results are thoroughly explained by analyses of the density of states and structure geometry. The out-of-plane dipole moments of the rippled structures are also presented to give further insights into potential applications of rippled antimonene in sensors, actuators, triboelectric nanogenerators, etc. This work presents extensive data and thorough analysis on the effect of rippling on antimonene. The identification of optimal ripple amplitudes for which the electronic properties of the pristine condition can be recovered will be highly significant in guiding the rational design and architecture of antimonene-based devices.
author2 School of Mechanical and Aerospace Engineering
author_facet School of Mechanical and Aerospace Engineering
Tian, Yujia
Kripalani, Devesh R.
Xue, Ming
Li, Shaofan
Zhou, Kun
format Article
author Tian, Yujia
Kripalani, Devesh R.
Xue, Ming
Li, Shaofan
Zhou, Kun
author_sort Tian, Yujia
title Highly stable electronic properties of rippled antimonene under compressive deformation
title_short Highly stable electronic properties of rippled antimonene under compressive deformation
title_full Highly stable electronic properties of rippled antimonene under compressive deformation
title_fullStr Highly stable electronic properties of rippled antimonene under compressive deformation
title_full_unstemmed Highly stable electronic properties of rippled antimonene under compressive deformation
title_sort highly stable electronic properties of rippled antimonene under compressive deformation
publishDate 2022
url https://hdl.handle.net/10356/161007
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