Excited-state optically detected magnetic resonance of spin defects in hexagonal boron nitride

Excited-state optically detected magnetic resonance of spin defects in hexagonal boron nitride

Negatively charged boron vacancy (V_{B}^{-}) centers in hexagonal boron nitride (h-BN) are promising spin defects in a van der Waals crystal. Understanding the spin properties of the excited state (ES) is critical for realizing dynamic nuclear polarization. Here, we report zero-field splitting in th...

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Bibliographic Details
Main Authors: Mu, Zhao, Cai, Hongbing, Chen, Disheng, Kenny, Jonathan, Jiang, Zhengzhi, Ru, Shihao, Lyu, Xiaodan, Koh, Teck Seng, Liu, Xiaogang, Aharonovich, Igor, Gao, Weibo
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2022
Subjects:
Science::Physics
Cryogenic Temperatures
Dynamic Nuclear Polarization
Online Access:https://hdl.handle.net/10356/161266
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Institution: Nanyang Technological University
Language: English
Description
Summary:Negatively charged boron vacancy (V_{B}^{-}) centers in hexagonal boron nitride (h-BN) are promising spin defects in a van der Waals crystal. Understanding the spin properties of the excited state (ES) is critical for realizing dynamic nuclear polarization. Here, we report zero-field splitting in the ES of D_{ES}=2160  MHz and its associated optically detected magnetic resonance (ODMR) contrast of 12% at cryogenic temperature. In contrast to nitrogen vacancy (NV^{-}) centers in diamond, the ODMR contrast of V_{B}^{-} centers is more prominent at cryotemperature than at room temperature. The ES has a g factor similar to the ground state. The ES photodynamics is further elucidated by measuring the level anticrossing of the V_{B}^{-} defects under varying external magnetic fields. Our results provide important information for utilizing the spin defects of h-BN in quantum technology.

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