Van-der-Waals epitaxy and proximity-induced superconductivity in the atomically thin quantum spin Hall insulator 1T'-WTe2

Ever since the emergence and increased theoretical understanding of topological states of matter, the interplay of superconductivity and topology has become an intensely investigated subject in condensed matter research. An intrinsically normal conducting material can inherit superconductivity from...

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Main Author: Ho, Duc Quan
Other Authors: Bent Weber
Format: Thesis-Doctor of Philosophy
Language:English
Published: Nanyang Technological University 2022
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Online Access:https://hdl.handle.net/10356/161898
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spelling sg-ntu-dr.10356-1618982023-02-28T23:43:19Z Van-der-Waals epitaxy and proximity-induced superconductivity in the atomically thin quantum spin Hall insulator 1T'-WTe2 Ho, Duc Quan Bent Weber School of Physical and Mathematical Sciences b.weber@ntu.edu.sg Science::Physics::Atomic physics::Solid state physics Ever since the emergence and increased theoretical understanding of topological states of matter, the interplay of superconductivity and topology has become an intensely investigated subject in condensed matter research. An intrinsically normal conducting material can inherit superconductivity from a parent superconductor via the proximity effect, usually understood as Andreev reflection at the interface between the distinct electronic structures of two separate conductors. However, at high interface transparency, strong coupling inevitably leads to changes in the band structure locally, owing to hybridization of electronic states across the heterointerface. In this thesis, we investigate heterostructures of the 2D topological (quantum spin Hall) insulator 1T’-WTe2 by van-der-Waals (vdW) epitaxy, comparing normal and superconducting vdW platforms. Epitaxy of 1T’-WTe2 on HOPG and NbSe2 reveals high-quality crystals on clean substrates, offering atomically sharp vdW interfaces. We confirm a quantum spin Hall (QSH) gap of ∼ 70 meV and metallic boundary states in both heterostructures, but find that strong interface hybridization in WTe2/NbSe2 weakens these topological signatures. The superconducting local density of states (LDOS), resolved in scanning tunneling spectroscopy down to 500 mK, reflects a hybrid electronic structure, well-described by a multi-band framework based on the McMillan equations. Our extended three-band McMillan model captures multi-band superconductivity inherent to the NbSe2 substrate and that induced by proximity in WTe2, self-consistently, and confirms that strong inter-layer coupling gives rise to a semi-metallic density of states in the 2D WTe2 bulk, even for nominally band-insulating crystals. Our model allows us to extract the induced order parameter ∆ ≃ 0.6 meV in the WTe2 monolayer bulk, stable beyond a 2 T magnetic field. We believe that our detailed multi-band analysis of the hybrid electronic structure provides a useful tool for sensitive spatial mapping of induced order parameters in proximitized atomically thin topological materials, and thus may encourage further experimental and theoretical studies of topological quantum devices in vdW QSH heterostructures. Doctor of Philosophy 2022-09-26T00:56:24Z 2022-09-26T00:56:24Z 2022 Thesis-Doctor of Philosophy Ho, D. Q. (2022). Van-der-Waals epitaxy and proximity-induced superconductivity in the atomically thin quantum spin Hall insulator 1T'-WTe2. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/161898 https://hdl.handle.net/10356/161898 10.32657/10356/161898 en This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License (CC BY-NC 4.0). application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Science::Physics::Atomic physics::Solid state physics
spellingShingle Science::Physics::Atomic physics::Solid state physics
Ho, Duc Quan
Van-der-Waals epitaxy and proximity-induced superconductivity in the atomically thin quantum spin Hall insulator 1T'-WTe2
description Ever since the emergence and increased theoretical understanding of topological states of matter, the interplay of superconductivity and topology has become an intensely investigated subject in condensed matter research. An intrinsically normal conducting material can inherit superconductivity from a parent superconductor via the proximity effect, usually understood as Andreev reflection at the interface between the distinct electronic structures of two separate conductors. However, at high interface transparency, strong coupling inevitably leads to changes in the band structure locally, owing to hybridization of electronic states across the heterointerface. In this thesis, we investigate heterostructures of the 2D topological (quantum spin Hall) insulator 1T’-WTe2 by van-der-Waals (vdW) epitaxy, comparing normal and superconducting vdW platforms. Epitaxy of 1T’-WTe2 on HOPG and NbSe2 reveals high-quality crystals on clean substrates, offering atomically sharp vdW interfaces. We confirm a quantum spin Hall (QSH) gap of ∼ 70 meV and metallic boundary states in both heterostructures, but find that strong interface hybridization in WTe2/NbSe2 weakens these topological signatures. The superconducting local density of states (LDOS), resolved in scanning tunneling spectroscopy down to 500 mK, reflects a hybrid electronic structure, well-described by a multi-band framework based on the McMillan equations. Our extended three-band McMillan model captures multi-band superconductivity inherent to the NbSe2 substrate and that induced by proximity in WTe2, self-consistently, and confirms that strong inter-layer coupling gives rise to a semi-metallic density of states in the 2D WTe2 bulk, even for nominally band-insulating crystals. Our model allows us to extract the induced order parameter ∆ ≃ 0.6 meV in the WTe2 monolayer bulk, stable beyond a 2 T magnetic field. We believe that our detailed multi-band analysis of the hybrid electronic structure provides a useful tool for sensitive spatial mapping of induced order parameters in proximitized atomically thin topological materials, and thus may encourage further experimental and theoretical studies of topological quantum devices in vdW QSH heterostructures.
author2 Bent Weber
author_facet Bent Weber
Ho, Duc Quan
format Thesis-Doctor of Philosophy
author Ho, Duc Quan
author_sort Ho, Duc Quan
title Van-der-Waals epitaxy and proximity-induced superconductivity in the atomically thin quantum spin Hall insulator 1T'-WTe2
title_short Van-der-Waals epitaxy and proximity-induced superconductivity in the atomically thin quantum spin Hall insulator 1T'-WTe2
title_full Van-der-Waals epitaxy and proximity-induced superconductivity in the atomically thin quantum spin Hall insulator 1T'-WTe2
title_fullStr Van-der-Waals epitaxy and proximity-induced superconductivity in the atomically thin quantum spin Hall insulator 1T'-WTe2
title_full_unstemmed Van-der-Waals epitaxy and proximity-induced superconductivity in the atomically thin quantum spin Hall insulator 1T'-WTe2
title_sort van-der-waals epitaxy and proximity-induced superconductivity in the atomically thin quantum spin hall insulator 1t'-wte2
publisher Nanyang Technological University
publishDate 2022
url https://hdl.handle.net/10356/161898
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