Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions

• Main Authors: Chi, Xiao, Guo, Rui, Xiong, Juxia, Ren, Lizhu, Peng, Xinwen, Tay, Beng Kang, Chen, Jingsheng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Electrical and electronic engineering; Engineering::Materials; Magnetic Tunnel Junctions; Magnetoresistance
• Online Access: https://hdl.handle.net/10356/162301
• Institution: Nanyang Technological University

Magnetic tunnel junctions (MTJs) with tunable tunneling magnetoresistances (TMR) have already been proven to have great potential for spintronics. Especially, when ferroelectric materials are used as insulating barriers, more novel functions of MTJs can be realized due to interface magnetoelectric c...