Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions

• المؤلفون الرئيسيون: Chi, Xiao, Guo, Rui, Xiong, Juxia, Ren, Lizhu, Peng, Xinwen, Tay, Beng Kang, Chen, Jingsheng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Electrical and electronic engineering; Engineering::Materials; Magnetic Tunnel Junctions; Magnetoresistance
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/162301

Magnetic tunnel junctions (MTJs) with tunable tunneling magnetoresistances (TMR) have already been proven to have great potential for spintronics. Especially, when ferroelectric materials are used as insulating barriers, more novel functions of MTJs can be realized due to interface magnetoelectric c...