Current-induced self-switching of perpendicular magnetization in CoPt single layer

• Main Authors: Liu, Liang, Zhou, Chenghang, Zhao, Tieyang, Yao, Bingqing, Zhou, Jing, Shu, Xinyu, Chen, Shaohai, Shi, Shu, Xi, Shibo, Lan, Da, Lin, Weinan, Xie, Qidong, Ren, Lizhu, Luo, Zhaoyang, Sun, Chao, Yang, Ping, Guo, Er-Jia, Dong, Zhili, Manchon, Aurelien, Chen, Jingsheng
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2023
• Subjects: Engineering::Materials; Crystal Structure; Electric Current
• Online Access: https://hdl.handle.net/10356/164483
• Institution: Nanyang Technological University

All-electric switching of perpendicular magnetization is a prerequisite for the integration of fast, high-density, and low-power magnetic memories and magnetic logic devices into electric circuits. To date, the field-free spin-orbit torque (SOT) switching of perpendicular magnetization has been obse...