Development of semiconductor based mid-infrared quantum cascade laser

In 1994, Jérôme Faist and his team realized the first experimental Quantum cascade laser of 4.3 microns up to 90K. Since then, there has been a rapid explosion in the development of these infra-red lasers; both in the temperature and power limits. Alongside its development also emerged a field of p...

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Bibliographic Details
Main Author: Yeo, Poh Meng
Other Authors: Wang Qijie
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2023
Subjects:
Online Access:https://hdl.handle.net/10356/165799
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Institution: Nanyang Technological University
Language: English
Description
Summary:In 1994, Jérôme Faist and his team realized the first experimental Quantum cascade laser of 4.3 microns up to 90K. Since then, there has been a rapid explosion in the development of these infra-red lasers; both in the temperature and power limits. Alongside its development also emerged a field of photonics that provided new waveguide and cavity technology which further enhanced the viability of quantum cascade lasers.