Diode characteristics in magnetic domain wall devices via geometrical pinning for neuromorphic computing

• Main Authors: Rahaman, Hasibur, Kumar, Durgesh, Chung, Hong Jing, Maddu, Ramu, Lim, Sze Ter, Jin, Tianli, Piramanayagam, S. N.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2023
• Subjects: Science::Physics; Neuromorphic Computation; Domain Wall Devices; Synapse; Pine Tree Devices
• Online Access: https://hdl.handle.net/10356/165939
• Institution: Nanyang Technological University

Neuromorphic computing (NC) is considered a potential vehicle for implementing energy-efficient artificial intelligence. To realize NC, several technologies are being investigated. Among them, the spin−orbit torque (SOT)- driven domain wall (DW) devices are one of the potential candidates. Researchers have proposed different device designs to achieve neurons and synapses, the building blocks of NC. However, the experimental realization of DW device-based NC is only at the primeval stage. Here, we have studied pine-tree DW devices, based on the Laplace pressure on the elastic DWs, for achieving synaptic functionalities and diode-like characteristics. We demonstrate an asymmetric pinning strength for DW motion in two opposite directions to show the potential of these devices as DW diodes. We have used micromagnetic simulations to understand the experimental findings and to estimate the Laplace pressure for various design parameters. The study provides a strategy to fabricate a multifunctional DW device, exhibiting synaptic properties and diode characteristics.