AI hardware for neuromorphic computing applications – memory device fabrication and characteristics

In this project, an overview of the field of both conventional and emerging memory technologies is provided. Then, a novel Resistive Random Access Memory (RRAM) is proposed to design and fabricate. Besides, RRAM devices under different parameters are tested and the performance test results are analy...

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Main Author: Liu, Jixuan
Other Authors: Zhang Dao Hua
Format: Thesis-Master by Coursework
Language:English
Published: Nanyang Technological University 2023
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Online Access:https://hdl.handle.net/10356/166459
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-1664592023-07-04T16:19:47Z AI hardware for neuromorphic computing applications – memory device fabrication and characteristics Liu, Jixuan Zhang Dao Hua School of Electrical and Electronic Engineering Technical University of Munich EDHZHANG@ntu.edu.sg Engineering::Electrical and electronic engineering In this project, an overview of the field of both conventional and emerging memory technologies is provided. Then, a novel Resistive Random Access Memory (RRAM) is proposed to design and fabricate. Besides, RRAM devices under different parameters are tested and the performance test results are analysed. The presented RRAM is one kind of three-terminal electronic synapse device. The main innovative part of the device is the use of chalcogenide material, Ge2Sb2Te5 (GST), instead of traditional transition metal oxide (TMO). Under the applied electric field, GST acts as an adjustable conductive path by allowing small metal atoms like Ag to diffuse in. By changing the structure and thickness of the electrodes and GST layer, devices with analog resistance switching characteristics and different electrical properties are investigated. Eventually, a high on/off ratio (~20) of the device with good linearity for conductance updates is achieved. Due to the superiority of good linearity of conductance update and low power consumption, this new type of RRAM is supposed to have a promising future with a wide range of application prospects, such as In-Memory Computation, Neuromorphic Computing, Security Applications, and Non-volatile SRAM. Keywords: Resistive Random Access Memory (RRAM), three-terminal electronic synapse devices, Ge2Sb2Te5 (GST), Neuromorphic Computing Master of Science (Green Electronics) 2023-04-27T08:29:20Z 2023-04-27T08:29:20Z 2023 Thesis-Master by Coursework Liu, J. (2023). AI hardware for neuromorphic computing applications – memory device fabrication and characteristics. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/166459 https://hdl.handle.net/10356/166459 en application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
spellingShingle Engineering::Electrical and electronic engineering
Liu, Jixuan
AI hardware for neuromorphic computing applications – memory device fabrication and characteristics
description In this project, an overview of the field of both conventional and emerging memory technologies is provided. Then, a novel Resistive Random Access Memory (RRAM) is proposed to design and fabricate. Besides, RRAM devices under different parameters are tested and the performance test results are analysed. The presented RRAM is one kind of three-terminal electronic synapse device. The main innovative part of the device is the use of chalcogenide material, Ge2Sb2Te5 (GST), instead of traditional transition metal oxide (TMO). Under the applied electric field, GST acts as an adjustable conductive path by allowing small metal atoms like Ag to diffuse in. By changing the structure and thickness of the electrodes and GST layer, devices with analog resistance switching characteristics and different electrical properties are investigated. Eventually, a high on/off ratio (~20) of the device with good linearity for conductance updates is achieved. Due to the superiority of good linearity of conductance update and low power consumption, this new type of RRAM is supposed to have a promising future with a wide range of application prospects, such as In-Memory Computation, Neuromorphic Computing, Security Applications, and Non-volatile SRAM. Keywords: Resistive Random Access Memory (RRAM), three-terminal electronic synapse devices, Ge2Sb2Te5 (GST), Neuromorphic Computing
author2 Zhang Dao Hua
author_facet Zhang Dao Hua
Liu, Jixuan
format Thesis-Master by Coursework
author Liu, Jixuan
author_sort Liu, Jixuan
title AI hardware for neuromorphic computing applications – memory device fabrication and characteristics
title_short AI hardware for neuromorphic computing applications – memory device fabrication and characteristics
title_full AI hardware for neuromorphic computing applications – memory device fabrication and characteristics
title_fullStr AI hardware for neuromorphic computing applications – memory device fabrication and characteristics
title_full_unstemmed AI hardware for neuromorphic computing applications – memory device fabrication and characteristics
title_sort ai hardware for neuromorphic computing applications – memory device fabrication and characteristics
publisher Nanyang Technological University
publishDate 2023
url https://hdl.handle.net/10356/166459
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