Minimum energy driven ultra-low voltage SRAM

• المؤلف الرئيسي: Sebastian, Hendrick
• مؤلفون آخرون: Kim Tae Hyoung
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2023
• الموضوعات: Engineering::Electrical and electronic engineering::Integrated circuits; Engineering::Electrical and electronic engineering::Electronic circuits
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/167033
• المؤسسة: Nanyang Technological University

The development of memory technology towards more compact and higher storage densities is increasingly challenging due to requirements such as small device sizes, power consumption, and low-voltage operations. However, smaller device sizes yield increasing process variations and, in conjunction with...