APA引文

Hu, S., & Ing, N. G. (2023). Investigation of failure mechanisms for gallium nitride (GaN) based high-electron-mobility transistors (HEMTs). Nanyang Technological University.

Chicago Style Citation

Hu, Shihao, and Ng Geok Ing. Investigation of Failure Mechanisms for Gallium Nitride (GaN) Based High-electron-mobility Transistors (HEMTs). Nanyang Technological University, 2023.

MLA引文

Hu, Shihao, and Ng Geok Ing. Investigation of Failure Mechanisms for Gallium Nitride (GaN) Based High-electron-mobility Transistors (HEMTs). Nanyang Technological University, 2023.

警告：這些引文格式不一定是100％准確.