A multilevel electrolyte-gated artificial synapse based on ruthenium-doped cobalt ferrite

• Main Authors: Monalisha, P., Li, Shengyao, Jin, Tianli, Kumar, P. S. Anil, Piramanayagam, S. N.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2023
• Subjects: Science::Physics::Atomic physics::Solid state physics; Artificial Intelligence; Neuromorphic Computing; Electrolyte Gating
• Online Access: https://hdl.handle.net/10356/167232
• Institution: Nanyang Technological University

Synaptic devices that emulate synchronized memory and processing are considered the core components of neuromorphic computing systems for the low-power implementation of artificial intelligence. In this regard, electrolyte-gated transistors (EGTs) have gained much scientific attention, having a similar working mechanism as the biological synapses. Moreover, compared to a traditional solid-state gate dielectric, the liquid dielectric has the key advantage of inducing extremely large modulation of carrier density while overcoming the problem of electric pinholes, that typically occurs when using large-area films gated through ultra-thin solid dielectrics. Herein we demonstrate a three-terminal synaptic transistor based on ruthenium-doped cobalt ferrite (CRFO) thin films by electrolyte gating. In the CRFO-based EGT, we have obtained multilevel non-volatile conductance states for analog computing and high-density storage. Furthermore, the proposed synaptic transistor exhibited essential synaptic behavior, including spike amplitude-dependent plasticity (SADP), spike duration-dependent plasticity (SDDP), long-term potentiation (LTP), and long-term depression (LTD) successfully by applying electrical pulses. This study can motivate the development of advanced neuromorphic devices that leverage simultaneous modulation of electrical and magnetic properties in the same device and show a new direction to synaptic electronics.