Selective staining on non-volatile memory cells for data retrieval

A new data retrieval approach utilizing selective staining is explored to differentiate '0' from '1' cells in EEPROM and Flash memory with node sizes of 40 nm and 250 nm. A two-step staining process based on selective oxide etching and copper galvanic displacement deposition is i...

Full description

Saved in:
Bibliographic Details
Main Authors: Zeng, Xiaomei, Liu, Qing, Tay, Jing Yun, Gan, Chee Lip
Other Authors: School of Materials Science and Engineering
Format: Article
Language:English
Published: 2023
Subjects:
Online Access:https://hdl.handle.net/10356/167780
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Be the first to leave a comment!
You must be logged in first