Selective staining on non-volatile memory cells for data retrieval
A new data retrieval approach utilizing selective staining is explored to differentiate '0' from '1' cells in EEPROM and Flash memory with node sizes of 40 nm and 250 nm. A two-step staining process based on selective oxide etching and copper galvanic displacement deposition is i...
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Main Authors: | , , , |
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格式: | Article |
語言: | English |
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2023
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在線閱讀: | https://hdl.handle.net/10356/167780 |
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