Selective staining on non-volatile memory cells for data retrieval

A new data retrieval approach utilizing selective staining is explored to differentiate '0' from '1' cells in EEPROM and Flash memory with node sizes of 40 nm and 250 nm. A two-step staining process based on selective oxide etching and copper galvanic displacement deposition is i...

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書目詳細資料
Main Authors: Zeng, Xiaomei, Liu, Qing, Tay, Jing Yun, Gan, Chee Lip
其他作者: School of Materials Science and Engineering
格式: Article
語言:English
出版: 2023
主題:
在線閱讀:https://hdl.handle.net/10356/167780
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