Selective staining on non-volatile memory cells for data retrieval

• المؤلفون الرئيسيون: Zeng, Xiaomei, Liu, Qing, Tay, Jing Yun, Gan, Chee Lip
• مؤلفون آخرون: School of Materials Science and Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Materials; Data Retrieval; Non-Volatile Memory
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/167780
• المؤسسة: Nanyang Technological University

A new data retrieval approach utilizing selective staining is explored to differentiate '0' from '1' cells in EEPROM and Flash memory with node sizes of 40 nm and 250 nm. A two-step staining process based on selective oxide etching and copper galvanic displacement deposition is i...