Enhanced spin hall effect in S-implanted Pt

High efficiency of charge–spin interconversion in spin Hall materials is a prime necessity to apprehend intriguing functionalities of spin–orbit torque for magnetization switching, auto-oscillations, and domain wall motion in energy-efficient and high-speed spintronic devices. To this end, innovatio...

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Main Authors: Shashank, Utkarsh, Medwal, Rohit, Shibata, Taiga, Nongjai, Razia, Vas, Joseph Vimal, Duchamp, Martial, Asokan, Kandasami, Rawat, Rajdeep Singh, Asada, Hironori, Gupta, Surbhi, Fukuma, Yasuhiro
Other Authors: School of Materials Science and Engineering
Format: Article
Language:English
Published: 2023
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Online Access:https://hdl.handle.net/10356/167882
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1678822023-06-21T07:25:40Z Enhanced spin hall effect in S-implanted Pt Shashank, Utkarsh Medwal, Rohit Shibata, Taiga Nongjai, Razia Vas, Joseph Vimal Duchamp, Martial Asokan, Kandasami Rawat, Rajdeep Singh Asada, Hironori Gupta, Surbhi Fukuma, Yasuhiro School of Materials Science and Engineering National Institute of Education Engineering::Materials Ion Implantation Spin Hall Angle High efficiency of charge–spin interconversion in spin Hall materials is a prime necessity to apprehend intriguing functionalities of spin–orbit torque for magnetization switching, auto-oscillations, and domain wall motion in energy-efficient and high-speed spintronic devices. To this end, innovations in fabricating advanced materials that possess not only large charge–spin conversion efficiency but also viable electrical and spin Hall conductivity are of importance. Here, a new spin Hall material designed by implanting low energy 12 keV sulfur ions in heavy metal Pt, named as Pt(S), is reported that demonstrates eight times higher conversion efficiency as compared to pristine Pt. The figure of merit, spin Hall angle (θSH), up to of 0.502 together with considerable electrical conductivity of 1.65 × 106 Ω–1 m–1 is achieved. The spin Hall conductivity increases with increasing , as , implying an intrinsic mechanism in a dirty metal conduction regime. A comparatively large of 8.32 × 105 ( ) Ω–1 m–1 among the reported heavy-metals-based alloys can be useful for developing next-generation spintronic devices using spin–orbit torque. Ministry of Education (MOE) Financial support from JSPS Grant-in-Aid (KAKENHI no. 18H01862, 18H05953, and 19K21112) is gratefully acknowledged. This work was partially supported by Nippon Sheet Glass Foundation. R.M. would like to acknowledge research grant MOE-2017-T2-2-129. M.D. acknowledges the financial support from MOE-2019-T1-001-066. TEM imaging and sample preparation were performed at the Facility for Analysis, Characterization, Testing and Simulation (FACTS) in Nanyang Technological University, Singapore. R.S.R would like to acknowledge research grant numbers MOE2017-T2-2-129, MOE2019-T2-1-058, and CRP21-2018-0093. 2023-05-24T01:00:41Z 2023-05-24T01:00:41Z 2020 Journal Article Shashank, U., Medwal, R., Shibata, T., Nongjai, R., Vas, J. V., Duchamp, M., Asokan, K., Rawat, R. S., Asada, H., Gupta, S. & Fukuma, Y. (2020). Enhanced spin hall effect in S-implanted Pt. Advanced Quantum Technologies, 4(1), 2000112-. https://dx.doi.org/10.1002/qute.202000112 2511-9044 https://hdl.handle.net/10356/167882 10.1002/qute.202000112 1 4 2000112 en NRF-CRP21-2018-0093 MOE-2017-T2-2-129 MOE-2019-T1-001-066 MOE2019-T2-1-058 Advanced Quantum Technologies © 2020 Wiley-VCH GmbH. All rights reserved.
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials
Ion Implantation
Spin Hall Angle
spellingShingle Engineering::Materials
Ion Implantation
Spin Hall Angle
Shashank, Utkarsh
Medwal, Rohit
Shibata, Taiga
Nongjai, Razia
Vas, Joseph Vimal
Duchamp, Martial
Asokan, Kandasami
Rawat, Rajdeep Singh
Asada, Hironori
Gupta, Surbhi
Fukuma, Yasuhiro
Enhanced spin hall effect in S-implanted Pt
description High efficiency of charge–spin interconversion in spin Hall materials is a prime necessity to apprehend intriguing functionalities of spin–orbit torque for magnetization switching, auto-oscillations, and domain wall motion in energy-efficient and high-speed spintronic devices. To this end, innovations in fabricating advanced materials that possess not only large charge–spin conversion efficiency but also viable electrical and spin Hall conductivity are of importance. Here, a new spin Hall material designed by implanting low energy 12 keV sulfur ions in heavy metal Pt, named as Pt(S), is reported that demonstrates eight times higher conversion efficiency as compared to pristine Pt. The figure of merit, spin Hall angle (θSH), up to of 0.502 together with considerable electrical conductivity of 1.65 × 106 Ω–1 m–1 is achieved. The spin Hall conductivity increases with increasing , as , implying an intrinsic mechanism in a dirty metal conduction regime. A comparatively large of 8.32 × 105 ( ) Ω–1 m–1 among the reported heavy-metals-based alloys can be useful for developing next-generation spintronic devices using spin–orbit torque.
author2 School of Materials Science and Engineering
author_facet School of Materials Science and Engineering
Shashank, Utkarsh
Medwal, Rohit
Shibata, Taiga
Nongjai, Razia
Vas, Joseph Vimal
Duchamp, Martial
Asokan, Kandasami
Rawat, Rajdeep Singh
Asada, Hironori
Gupta, Surbhi
Fukuma, Yasuhiro
format Article
author Shashank, Utkarsh
Medwal, Rohit
Shibata, Taiga
Nongjai, Razia
Vas, Joseph Vimal
Duchamp, Martial
Asokan, Kandasami
Rawat, Rajdeep Singh
Asada, Hironori
Gupta, Surbhi
Fukuma, Yasuhiro
author_sort Shashank, Utkarsh
title Enhanced spin hall effect in S-implanted Pt
title_short Enhanced spin hall effect in S-implanted Pt
title_full Enhanced spin hall effect in S-implanted Pt
title_fullStr Enhanced spin hall effect in S-implanted Pt
title_full_unstemmed Enhanced spin hall effect in S-implanted Pt
title_sort enhanced spin hall effect in s-implanted pt
publishDate 2023
url https://hdl.handle.net/10356/167882
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