Fabrication and characterization of spin-based synaptic devices
Spin orbit torque (SOT) induced chiral domain wall (DW) motion in heavy-metal/ferromagnetic racetrack devices is promising for achieving energy-efficient and high-speed computing elements for edge intelligence[1]. By utilizing fine-grained control of the DW positions and hence, variable resistance r...
Saved in:
Main Author: | |
---|---|
Other Authors: | |
Format: | Final Year Project |
Language: | English |
Published: |
Nanyang Technological University
2023
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/168537 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
id |
sg-ntu-dr.10356-168537 |
---|---|
record_format |
dspace |
spelling |
sg-ntu-dr.10356-1685372023-07-07T16:04:02Z Fabrication and characterization of spin-based synaptic devices Lim, Idayu Radhakrishnan K School of Electrical and Electronic Engineering A*STAR Institute of Material Research and Engineering ERADHA@ntu.edu.sg Engineering::Electrical and electronic engineering Spin orbit torque (SOT) induced chiral domain wall (DW) motion in heavy-metal/ferromagnetic racetrack devices is promising for achieving energy-efficient and high-speed computing elements for edge intelligence[1]. By utilizing fine-grained control of the DW positions and hence, variable resistance readouts, analog synapses can be emulated[2]. This work studies the chiral DW nucleation and dynamics within Pt/Co/MgO wire racetracks, in a parallel multi-wire configuration, to achieve a multi-state variable resistor mimicking synaptic operations. The [ 3/ 0.9 / 1.5] 15 thin film, with Dzyaloshinskii-Moriya interaction of 1.6 mJ/ 2 and effective perpendicular anisotropy of 0.264 MJ/ 3, was fabricated into a multiple racetrack device of varying wire widths (900 nm - 1200 nm). An optimal wire nucleation pad to wire width ratio of 10:1 is selected to ensure preferential nucleation of domains within the nucleation pads. Using the magneto optic Kerr effect microscopy with in situ electrical pulsing set-up, we demonstrate DW motion across the wires in the velocity range of 0.3 – 1.3 m/s, when subjected to injected voltages of 3.5 to 5 V and pulse widths of 0.25 us to 1 us. These results pave the path for engineering chiral spin textures for unconventional computing frameworks. Bachelor of Engineering (Electrical and Electronic Engineering) 2023-06-14T08:08:12Z 2023-06-14T08:08:12Z 2023 Final Year Project (FYP) Lim, I. (2023). Fabrication and characterization of spin-based synaptic devices. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/168537 https://hdl.handle.net/10356/168537 en application/pdf Nanyang Technological University |
institution |
Nanyang Technological University |
building |
NTU Library |
continent |
Asia |
country |
Singapore Singapore |
content_provider |
NTU Library |
collection |
DR-NTU |
language |
English |
topic |
Engineering::Electrical and electronic engineering |
spellingShingle |
Engineering::Electrical and electronic engineering Lim, Idayu Fabrication and characterization of spin-based synaptic devices |
description |
Spin orbit torque (SOT) induced chiral domain wall (DW) motion in heavy-metal/ferromagnetic racetrack devices is promising for achieving energy-efficient and high-speed computing elements for edge intelligence[1]. By utilizing fine-grained control of the DW positions and hence, variable resistance readouts, analog synapses can be emulated[2]. This work studies the chiral DW nucleation and dynamics within Pt/Co/MgO wire racetracks, in a parallel multi-wire configuration, to achieve a multi-state variable resistor mimicking synaptic operations. The [ 3/ 0.9 / 1.5] 15 thin film, with Dzyaloshinskii-Moriya interaction of 1.6 mJ/ 2 and effective perpendicular anisotropy of 0.264 MJ/ 3, was fabricated into a multiple racetrack device of varying wire widths (900 nm - 1200 nm). An optimal wire nucleation pad to wire width ratio of 10:1 is selected to ensure preferential nucleation of domains within the nucleation pads. Using the magneto optic Kerr effect microscopy with in situ electrical pulsing set-up, we demonstrate DW motion across the wires in the velocity range of 0.3 – 1.3 m/s, when subjected to injected voltages of 3.5 to 5 V and pulse widths of 0.25 us to 1 us. These results pave the path for engineering chiral spin textures for unconventional computing frameworks. |
author2 |
Radhakrishnan K |
author_facet |
Radhakrishnan K Lim, Idayu |
format |
Final Year Project |
author |
Lim, Idayu |
author_sort |
Lim, Idayu |
title |
Fabrication and characterization of spin-based synaptic devices |
title_short |
Fabrication and characterization of spin-based synaptic devices |
title_full |
Fabrication and characterization of spin-based synaptic devices |
title_fullStr |
Fabrication and characterization of spin-based synaptic devices |
title_full_unstemmed |
Fabrication and characterization of spin-based synaptic devices |
title_sort |
fabrication and characterization of spin-based synaptic devices |
publisher |
Nanyang Technological University |
publishDate |
2023 |
url |
https://hdl.handle.net/10356/168537 |
_version_ |
1772828690255708160 |