Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

• Main Authors: Zahoor, Furqan, Hussin, Fawnizu Azmadi, Isyaku, Usman Bature, Gupta, Shagun, Khanday, Farooq Ahmad, Chattopadhyay, Anupam, Abbas, Haider
• Other Authors: School of Computer Science and Engineering
• Format: Article
• Language: English
• Published: 2023
• Subjects: Engineering::Computer science and engineering; Engineering::Electrical and electronic engineering; Resistive Random Access Memory; High-Density Memory
• Online Access: https://hdl.handle.net/10356/169701
• Institution: Nanyang Technological University

The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of data-int...