Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries

Band bending near mirror twin domain boundaries (MTBs) in a MoSe2 monolayer grown on different substrates, i.e., highly oriented pyrolytic graphite (HOPG), graphene-on-SiC, and crystalline Au(110), is investigated by low temperature scanning tunneling microscopy/spectroscopy. Upshift bending of the...

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Main Authors: Yuan, Mengfei, Zhang, Junqiu, Yue, Xingyu, Xia, Yipu, Jin, Yuanjun, Ho, Wingkin, Xie, Maohai
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2023
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Online Access:https://hdl.handle.net/10356/170048
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1700482023-08-28T15:35:02Z Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries Yuan, Mengfei Zhang, Junqiu Yue, Xingyu Xia, Yipu Jin, Yuanjun Ho, Wingkin Xie, Maohai School of Physical and Mathematical Sciences Science::Physics Band Bending Scanning Tunneling Spectroscopy Band bending near mirror twin domain boundaries (MTBs) in a MoSe2 monolayer grown on different substrates, i.e., highly oriented pyrolytic graphite (HOPG), graphene-on-SiC, and crystalline Au(110), is investigated by low temperature scanning tunneling microscopy/spectroscopy. Upshift bending of the valence band edge near MTB is observed on both graphene and HOPG substrates, whereas a downshift bending is found on Au(110). For the former, the magnitudes of bending are different. This is explained based on the static charge model, where an accumulative charge exists at MTBs due to both the electrical dipole discontinuity across the MTB as well as charge transfer between the substrate and MoSe2 epilayer. The relevance of the static electric model is further affirmed by noting a geometric effect on the band bending, where it is asymmetric across the vertex of an MTB loop. Published version This work was financially supported by grants from the Research Grant Council of Hong Kong Special Administrative Region, China (Nos. C7036/17W and AoE/P-701/20). 2023-08-22T07:33:55Z 2023-08-22T07:33:55Z 2023 Journal Article Yuan, M., Zhang, J., Yue, X., Xia, Y., Jin, Y., Ho, W. & Xie, M. (2023). Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries. Advanced Electronic Materials, 9(7), 2300112-. https://dx.doi.org/10.1002/aelm.202300112 2199-160X https://hdl.handle.net/10356/170048 10.1002/aelm.202300112 2-s2.0-85156120604 7 9 2300112 en Advanced Electronic Materials © 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Science::Physics
Band Bending
Scanning Tunneling Spectroscopy
spellingShingle Science::Physics
Band Bending
Scanning Tunneling Spectroscopy
Yuan, Mengfei
Zhang, Junqiu
Yue, Xingyu
Xia, Yipu
Jin, Yuanjun
Ho, Wingkin
Xie, Maohai
Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries
description Band bending near mirror twin domain boundaries (MTBs) in a MoSe2 monolayer grown on different substrates, i.e., highly oriented pyrolytic graphite (HOPG), graphene-on-SiC, and crystalline Au(110), is investigated by low temperature scanning tunneling microscopy/spectroscopy. Upshift bending of the valence band edge near MTB is observed on both graphene and HOPG substrates, whereas a downshift bending is found on Au(110). For the former, the magnitudes of bending are different. This is explained based on the static charge model, where an accumulative charge exists at MTBs due to both the electrical dipole discontinuity across the MTB as well as charge transfer between the substrate and MoSe2 epilayer. The relevance of the static electric model is further affirmed by noting a geometric effect on the band bending, where it is asymmetric across the vertex of an MTB loop.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Yuan, Mengfei
Zhang, Junqiu
Yue, Xingyu
Xia, Yipu
Jin, Yuanjun
Ho, Wingkin
Xie, Maohai
format Article
author Yuan, Mengfei
Zhang, Junqiu
Yue, Xingyu
Xia, Yipu
Jin, Yuanjun
Ho, Wingkin
Xie, Maohai
author_sort Yuan, Mengfei
title Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries
title_short Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries
title_full Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries
title_fullStr Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries
title_full_unstemmed Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries
title_sort substrate effect on band bending of mose₂ monolayer near mirror-twin domain boundaries
publishDate 2023
url https://hdl.handle.net/10356/170048
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