Two-dimensional layered materials meet perovskite oxides: a combination for high-performance electronic devices

As the Si-based transistors scale down to atomic dimensions, the basic principle of current electronics, which heavily relies on the tunable charge degree of freedom, faces increasing challenges to meet the future requirements of speed, switching energy, heat dissipation, and packing density as well...

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Bibliographic Details
Main Authors: Yang, Allen Jian, Wang, Su-Xi, Xu, Jianwei, Loh, Xian Jun, Zhu, Qiang, Wang, Renshaw Xiao
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2023
Subjects:
Online Access:https://hdl.handle.net/10356/170150
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Institution: Nanyang Technological University
Language: English