High performance, flexible, and thermally stable all-solid-state organic electrochemical transistor based on thermoplastic polyurethane ion gel

Organic electrochemical transistors (OECTs) are a generation of transistors with high transconductance, where the whole volume of the semiconducting channel is involved in the electrochemical doping process. However, the use of liquid electrolytes limits the application of OECTs, and the doping p...

全面介紹

Saved in:
書目詳細資料
Main Authors: Hou, Kunqi, Chen, Shuai, Moudgil, Akshay, Wu, Xihu, Tam, Teck Lip Dexter, Lew, Wen Siang, Leong, Wei Lin
其他作者: School of Physical and Mathematical Sciences
格式: Article
語言:English
出版: 2023
主題:
在線閱讀:https://hdl.handle.net/10356/170478
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!
機構: Nanyang Technological University
語言: English
實物特徵
總結:Organic electrochemical transistors (OECTs) are a generation of transistors with high transconductance, where the whole volume of the semiconducting channel is involved in the electrochemical doping process. However, the use of liquid electrolytes limits the application of OECTs, and the doping process is also complicated due to the presence of water in the electrolyte. In this study, thermoplastic polyurethane (TPU)-based solid electrolyte was used in OECTs for the first time. Three types of ionic liquids were blended with a TPU polymer matrix as a solid electrolyte and investigated on the OECTs based on three kinds of p-type conjugated semiconductors. An in situ spectrochemistry study was further carried out to confirm the doping/dedoping process of these conjugated semiconductors by the TPU-based solid electrolyte. The robustness and high stability of the fabricated solid-state OECTs (SSOECTs) were demonstrated through continuously applied bias, long time operation under ambient conditions, and varying temperatures (−50 to 120 °C). Highly flexible SSOECTs were also obtained on a polyethylene terephthalate (PET) substrate, which showed negligible fluctuation in on/off-current (Ion/Ioff) after 1000 cycles of bending. Based on these highperforming SSOECTs, inverter circuits were fabricated in both unipolar and complementary configurations, where n-type and p-type OECT-based complementary inverters showed a higher gain (46) compared with that of the unipolar design.