Photoelectric multilevel memory device based on covalent organic polymer film with keto–enol tautomerism for harsh environments applications

Covalent organic polymers (COPs) memristors with multilevel memory behavior in harsh environments and photoelectric regulation are crucial for high-density storage and high-efficiency neuromorphic computing. Here, a donor–acceptor (D–A)-type COP film (Py-COP-3), which is initiated by keto–enol tauto...

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Main Authors: Zhou, Pan-Ke, Yu, Hongling, Huang, Weiguo, Chee, Mun Yin, Wu, Shuo, Zeng, Tao, Lim, Gerard Joseph, Xu, Hong, Yu, Zhiyang, Li, Haohong, Lew, Wen Siang, Chen, Xiong
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2023
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Online Access:https://hdl.handle.net/10356/171279
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1712792023-10-18T04:10:27Z Photoelectric multilevel memory device based on covalent organic polymer film with keto–enol tautomerism for harsh environments applications Zhou, Pan-Ke Yu, Hongling Huang, Weiguo Chee, Mun Yin Wu, Shuo Zeng, Tao Lim, Gerard Joseph Xu, Hong Yu, Zhiyang Li, Haohong Lew, Wen Siang Chen, Xiong School of Physical and Mathematical Sciences Engineering::Materials Covalent Organic Polymers Harsh Environments Covalent organic polymers (COPs) memristors with multilevel memory behavior in harsh environments and photoelectric regulation are crucial for high-density storage and high-efficiency neuromorphic computing. Here, a donor–acceptor (D–A)-type COP film (Py-COP-3), which is initiated by keto–enol tautomerism, is proposed for high-performance memristors. Satisfactorily, the indium tin oxide (ITO)/Py-COP-3/Ag device demonstrates multilevel memory performance, even in high temperatures, acid-base corrosion, and various organic solvents. Moreover, the performance can be modulated by the photoelectric effect to maintain a great switching behavior. By contrast, Py-COP-0, with similar structure and chemical composition to Py-COP-3 but without keto–enol tautomerism, exhibits binary storage performance. Further studies unravel that both the formation of conductive filaments and charge transfer within D-A Py-COP-3 film contribute to the resistive switching behavior of memory devices. This work was financially supported by the National Natural Science Foundation of China (21972021 and 22111530111). P. K. Zhou sincerely acknowledges the support of China Scholarship Council (grant no. 202206650013). 2023-10-18T04:10:27Z 2023-10-18T04:10:27Z 2023 Journal Article Zhou, P., Yu, H., Huang, W., Chee, M. Y., Wu, S., Zeng, T., Lim, G. J., Xu, H., Yu, Z., Li, H., Lew, W. S. & Chen, X. (2023). Photoelectric multilevel memory device based on covalent organic polymer film with keto–enol tautomerism for harsh environments applications. Advanced Functional Materials. https://dx.doi.org/10.1002/adfm.202306593 1616-301X https://hdl.handle.net/10356/171279 10.1002/adfm.202306593 2-s2.0-85171182138 en Advanced Functional Materials © 2023 Wiley-VCH GmbH. All rights reserved.
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials
Covalent Organic Polymers
Harsh Environments
spellingShingle Engineering::Materials
Covalent Organic Polymers
Harsh Environments
Zhou, Pan-Ke
Yu, Hongling
Huang, Weiguo
Chee, Mun Yin
Wu, Shuo
Zeng, Tao
Lim, Gerard Joseph
Xu, Hong
Yu, Zhiyang
Li, Haohong
Lew, Wen Siang
Chen, Xiong
Photoelectric multilevel memory device based on covalent organic polymer film with keto–enol tautomerism for harsh environments applications
description Covalent organic polymers (COPs) memristors with multilevel memory behavior in harsh environments and photoelectric regulation are crucial for high-density storage and high-efficiency neuromorphic computing. Here, a donor–acceptor (D–A)-type COP film (Py-COP-3), which is initiated by keto–enol tautomerism, is proposed for high-performance memristors. Satisfactorily, the indium tin oxide (ITO)/Py-COP-3/Ag device demonstrates multilevel memory performance, even in high temperatures, acid-base corrosion, and various organic solvents. Moreover, the performance can be modulated by the photoelectric effect to maintain a great switching behavior. By contrast, Py-COP-0, with similar structure and chemical composition to Py-COP-3 but without keto–enol tautomerism, exhibits binary storage performance. Further studies unravel that both the formation of conductive filaments and charge transfer within D-A Py-COP-3 film contribute to the resistive switching behavior of memory devices.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Zhou, Pan-Ke
Yu, Hongling
Huang, Weiguo
Chee, Mun Yin
Wu, Shuo
Zeng, Tao
Lim, Gerard Joseph
Xu, Hong
Yu, Zhiyang
Li, Haohong
Lew, Wen Siang
Chen, Xiong
format Article
author Zhou, Pan-Ke
Yu, Hongling
Huang, Weiguo
Chee, Mun Yin
Wu, Shuo
Zeng, Tao
Lim, Gerard Joseph
Xu, Hong
Yu, Zhiyang
Li, Haohong
Lew, Wen Siang
Chen, Xiong
author_sort Zhou, Pan-Ke
title Photoelectric multilevel memory device based on covalent organic polymer film with keto–enol tautomerism for harsh environments applications
title_short Photoelectric multilevel memory device based on covalent organic polymer film with keto–enol tautomerism for harsh environments applications
title_full Photoelectric multilevel memory device based on covalent organic polymer film with keto–enol tautomerism for harsh environments applications
title_fullStr Photoelectric multilevel memory device based on covalent organic polymer film with keto–enol tautomerism for harsh environments applications
title_full_unstemmed Photoelectric multilevel memory device based on covalent organic polymer film with keto–enol tautomerism for harsh environments applications
title_sort photoelectric multilevel memory device based on covalent organic polymer film with keto–enol tautomerism for harsh environments applications
publishDate 2023
url https://hdl.handle.net/10356/171279
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