Fermi level depinning via insertion of a graphene buffer layer at the gold-2D tin monoxide contact
Two-dimensional (2D) tin monoxide (SnO) has attracted much attention owing to its distinctive electronic and optical properties, which render itself suitable as a channel material in field effect transistors (FETs). However, upon contact with metals for such applications, the Fermi level pinning eff...
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Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
2023
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/171331 |
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Institution: | Nanyang Technological University |
Language: | English |