Fermi level depinning via insertion of a graphene buffer layer at the gold-2D tin monoxide contact

Two-dimensional (2D) tin monoxide (SnO) has attracted much attention owing to its distinctive electronic and optical properties, which render itself suitable as a channel material in field effect transistors (FETs). However, upon contact with metals for such applications, the Fermi level pinning eff...

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Bibliographic Details
Main Authors: Tian, Yujia, Kripalani, Devesh R., Xue, Ming, Zhou, Kun
Other Authors: School of Mechanical and Aerospace Engineering
Format: Article
Language:English
Published: 2023
Subjects:
Online Access:https://hdl.handle.net/10356/171331
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Institution: Nanyang Technological University
Language: English