Fermi level depinning via insertion of a graphene buffer layer at the gold-2D tin monoxide contact

• المؤلفون الرئيسيون: Tian, Yujia, Kripalani, Devesh R., Xue, Ming, Zhou, Kun
• مؤلفون آخرون: School of Mechanical and Aerospace Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Mechanical engineering; Heterojunctions; Metal-Semiconductor Contacts
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/171331
• المؤسسة: Nanyang Technological University

Two-dimensional (2D) tin monoxide (SnO) has attracted much attention owing to its distinctive electronic and optical properties, which render itself suitable as a channel material in field effect transistors (FETs). However, upon contact with metals for such applications, the Fermi level pinning eff...