Multi-controllability of ambipolar photoconductivity in transition metal dichalcogenides van der Waals heterostructures
2D transition metal dichalcogenides (TMDs) and their van der Waals heterostructures possess great potential for optoelectronic applications thanks to their strong quantum confinement and flexibility in bandgap engineering. Photodetection based on TMDs utilizing photoconductance typically exhibits po...
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sg-ntu-dr.10356-1713752023-10-26T07:42:00Z Multi-controllability of ambipolar photoconductivity in transition metal dichalcogenides van der Waals heterostructures Elbanna, Ahmed Wang, Zeng Liu, Yuanda Wu, Steve Qing Yang Liang, Xinan Liu, Hongfei Ooi, Zi En Jiang, Mengting Deng, Jie Sun, Handong Pan, Jisheng Shen, Zexiang Teng, Jinghua School of Physical and Mathematical Sciences Institute of Materials Research and Engineering, A*STAR Centre for Disruptive Photonic Technologies (CDPT) The Photonics Institute Science::Mathematics Science::Physics 2D Materials Ambipolar Photoresponse 2D transition metal dichalcogenides (TMDs) and their van der Waals heterostructures possess great potential for optoelectronic applications thanks to their strong quantum confinement and flexibility in bandgap engineering. Photodetection based on TMDs utilizing photoconductance typically exhibits positive photoconductance resulting from the generation of photocarriers upon illumination. This study reports a SnSe2/MoS2 photodetector operating over a broadband range from deep ultraviolet to infrared wavelengths with not only a high responsivity and self-powered feature but also ambipolar photoresponse with both positive and negative photoconductances to multi-control parameters of wavelength, gate voltage, and laser power. The transition from positive to negative photoconductance by gate voltage and laser power indicates that charge recombination and interlayer exciton trapping result in negative photoconductance. The coexistence and controllable positive and negative photoconductance hold potential for multifunctional optoelectronic devices responding to multi-control parameters. Agency for Science, Technology and Research (A*STAR) National Research Foundation (NRF) The work was financially supported by the National Research Foundation, Singapore under its CRP program (NRF-CRP26-2021-0004), A*STAR under AME IRG Program (A20E5c0084 and A2083c0058), and GAP Funding (I21D1AG010). Y.L. acknowledges funding of A*STAR Career Development Fund – Seed Projects (C222812008). 2023-10-26T07:42:00Z 2023-10-26T07:42:00Z 2023 Journal Article Elbanna, A., Wang, Z., Liu, Y., Wu, S. Q. Y., Liang, X., Liu, H., Ooi, Z. E., Jiang, M., Deng, J., Sun, H., Pan, J., Shen, Z. & Teng, J. (2023). Multi-controllability of ambipolar photoconductivity in transition metal dichalcogenides van der Waals heterostructures. Advanced Materials Technologies. https://dx.doi.org/10.1002/admt.202301079 2365-709X https://hdl.handle.net/10356/171375 10.1002/admt.202301079 2-s2.0-85171351457 en NRF-CRP26-2021-0004 A20E5c0084 A2083c0058 C222812008 Advanced Materials Technologies © 2023 Wiley-VCH GmbH. All rights reserved. |
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Science::Mathematics Science::Physics 2D Materials Ambipolar Photoresponse Elbanna, Ahmed Wang, Zeng Liu, Yuanda Wu, Steve Qing Yang Liang, Xinan Liu, Hongfei Ooi, Zi En Jiang, Mengting Deng, Jie Sun, Handong Pan, Jisheng Shen, Zexiang Teng, Jinghua Multi-controllability of ambipolar photoconductivity in transition metal dichalcogenides van der Waals heterostructures |
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2D transition metal dichalcogenides (TMDs) and their van der Waals heterostructures possess great potential for optoelectronic applications thanks to their strong quantum confinement and flexibility in bandgap engineering. Photodetection based on TMDs utilizing photoconductance typically exhibits positive photoconductance resulting from the generation of photocarriers upon illumination. This study reports a SnSe2/MoS2 photodetector operating over a broadband range from deep ultraviolet to infrared wavelengths with not only a high responsivity and self-powered feature but also ambipolar photoresponse with both positive and negative photoconductances to multi-control parameters of wavelength, gate voltage, and laser power. The transition from positive to negative photoconductance by gate voltage and laser power indicates that charge recombination and interlayer exciton trapping result in negative photoconductance. The coexistence and controllable positive and negative photoconductance hold potential for multifunctional optoelectronic devices responding to multi-control parameters. |
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School of Physical and Mathematical Sciences |
author_facet |
School of Physical and Mathematical Sciences Elbanna, Ahmed Wang, Zeng Liu, Yuanda Wu, Steve Qing Yang Liang, Xinan Liu, Hongfei Ooi, Zi En Jiang, Mengting Deng, Jie Sun, Handong Pan, Jisheng Shen, Zexiang Teng, Jinghua |
format |
Article |
author |
Elbanna, Ahmed Wang, Zeng Liu, Yuanda Wu, Steve Qing Yang Liang, Xinan Liu, Hongfei Ooi, Zi En Jiang, Mengting Deng, Jie Sun, Handong Pan, Jisheng Shen, Zexiang Teng, Jinghua |
author_sort |
Elbanna, Ahmed |
title |
Multi-controllability of ambipolar photoconductivity in transition metal dichalcogenides van der Waals heterostructures |
title_short |
Multi-controllability of ambipolar photoconductivity in transition metal dichalcogenides van der Waals heterostructures |
title_full |
Multi-controllability of ambipolar photoconductivity in transition metal dichalcogenides van der Waals heterostructures |
title_fullStr |
Multi-controllability of ambipolar photoconductivity in transition metal dichalcogenides van der Waals heterostructures |
title_full_unstemmed |
Multi-controllability of ambipolar photoconductivity in transition metal dichalcogenides van der Waals heterostructures |
title_sort |
multi-controllability of ambipolar photoconductivity in transition metal dichalcogenides van der waals heterostructures |
publishDate |
2023 |
url |
https://hdl.handle.net/10356/171375 |
_version_ |
1781793685269118976 |