Room-temperature lateral spin valve in graphene/Fe₃GaTe₂ van der Waals heterostructures

• Main Authors: Pan, Haiyang, Zhang, Chusheng, Shi, Jiayu, Hu, Xueqi, Wang, Naizhou, An, Liheng, Duan, Ruihuan, Deb, Pritam, Liu, Zheng, Gao, Weibo
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2023
• Subjects: Engineering::Materials; Lateral Spin Valve; Spintronics Device
• Online Access: https://hdl.handle.net/10356/171446
• Institution: Nanyang Technological University

The remarkable electronic properties of two-dimensional van der Waals (vdW) materials make them promising platforms for next-generation spintronic devices. In this study, we demonstrate the room-temperature graphene lateral spin valve devices in the Fe3GaTe2/graphene full vdW heterostructure. The spin transport channel is few-layer graphene, and room-temperature ferromagnet Fe3GaTe2 is used as both the spin injector and detector. Pronounced nonlocal spin valve signals can be observed when the magnetic field sweeps along the out-of-plane easy axis direction of Fe3GaTe2. This nonlocal spin valve signal persists even at 320 K, realizing a room-temperature lateral spin valve in full vdW heterostructure. Additionally, a significant magnitude nonlocal spin valve signal can be detected even with the low bias current of 1 μA. Furthermore, the magnetic field angle-dependent nonlocal measurements revealed that the nonlocal spin valve behavior is closely related to the robust large perpendicular magnetic anisotropy property of Fe3GaTe2. The nonlocal spin valve signal is prominent when the magnetic field is applied near the perpendicular direction and disappears under the in-plane magnetic field. These results demonstrate the potential of Fe3GaTe2 as a prospective candidate for constructing room-temperature, two-dimensional vdW spintronic devices.