Layer-controlled nonlinear terahertz valleytronics in two-dimensional semimetal and semiconductor PtSe₂

Platinum diselenide ((Formula presented.)) is a promising two-dimensional (2D) material for the terahertz (THz) range as, unlike other transition metal dichalcogenides (TMDs), its bandgap can be uniquely tuned from a semiconductor in the near-infrared to a semimetal with the number of atomic layers....

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Main Authors: Hemmat, Minoosh, Ayari, Sabrine, Micica, Martin, Vergnet, Hadrien, Guo, Shasha, Arfaoui, Mehdi, Yu, Xuechao, Vala, Daniel, Wright, Adrien, Postava, Kamil, Mangeney, Juliette, Carosella, Francesca, Jaziri, Sihem, Wang, Qi Jie, Liu, Zheng, Tignon, Jerome, Ferreira, Robson, Baudin, Emmanuel, Dhillon, Sukhdeep
Other Authors: School of Materials Science and Engineering
Format: Article
Language:English
Published: 2023
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Online Access:https://hdl.handle.net/10356/171573
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spelling sg-ntu-dr.10356-1715732023-11-03T15:46:21Z Layer-controlled nonlinear terahertz valleytronics in two-dimensional semimetal and semiconductor PtSe₂ Hemmat, Minoosh Ayari, Sabrine Micica, Martin Vergnet, Hadrien Guo, Shasha Arfaoui, Mehdi Yu, Xuechao Vala, Daniel Wright, Adrien Postava, Kamil Mangeney, Juliette Carosella, Francesca Jaziri, Sihem Wang, Qi Jie Liu, Zheng Tignon, Jerome Ferreira, Robson Baudin, Emmanuel Dhillon, Sukhdeep School of Materials Science and Engineering Engineering::Materials Dirac Semimetal Optical Nonlinearities Platinum diselenide ((Formula presented.)) is a promising two-dimensional (2D) material for the terahertz (THz) range as, unlike other transition metal dichalcogenides (TMDs), its bandgap can be uniquely tuned from a semiconductor in the near-infrared to a semimetal with the number of atomic layers. This gives the material unique THz photonic properties that can be layer-engineered. Here, we demonstrate that a controlled THz nonlinearity—tuned from monolayer to bulk (Formula presented.) —can be realized in wafer size polycrystalline (Formula presented.) through the generation of ultrafast photocurrents and the engineering of the bandstructure valleys. This is combined with the (Formula presented.) layer interaction with the substrate for a broken material centrosymmetry, permitting a second order nonlinearity. Further, we show layer dependent circular dichroism, where the sign of the ultrafast currents and hence the phase of the emitted THz pulse can be controlled through the excitation of different bandstructure valleys. In particular, we show that a semimetal has a strong dichroism that is absent in the monolayer and few layer semiconducting limit. The microscopic origins of this TMD bandstructure engineering are highlighted through detailed DFT simulations, and shows the circular dichroism can be controlled when (Formula presented.) becomes a semimetal and when the K-valleys can be excited. As well as showing that (Formula presented.) is a promising material for THz generation through layer controlled optical nonlinearities, this work opens up a new class of circular dichroism materials beyond the monolayer limit that has been the case of traditional TMDs, and impacting a range of domains from THz valleytronics, THz spintronics to harmonic generation. National Research Foundation (NRF) Published version This work was funded by H2020 Future and Emerging Technologies, Grant/Award Number:964735; H2020 Excellent Science, Grant/Award Number: 881603; Agence Nationale de la Recherche, Grant/Award Numbers: ANR-16-CE24-0023, ANR-2018-CE08-018-05; National Research Foundation Singapore, Grant/Award Number: NRF-CRP26-2021-0004; Region Ile de France; Equip Meso, Grant/Award Number: ANR-10-EQPX-29-01. 2023-10-31T03:08:13Z 2023-10-31T03:08:13Z 2023 Journal Article Hemmat, M., Ayari, S., Micica, M., Vergnet, H., Guo, S., Arfaoui, M., Yu, X., Vala, D., Wright, A., Postava, K., Mangeney, J., Carosella, F., Jaziri, S., Wang, Q. J., Liu, Z., Tignon, J., Ferreira, R., Baudin, E. & Dhillon, S. (2023). Layer-controlled nonlinear terahertz valleytronics in two-dimensional semimetal and semiconductor PtSe₂. InfoMat, e12468-. https://dx.doi.org/10.1002/inf2.12468 2567-3165 https://hdl.handle.net/10356/171573 10.1002/inf2.12468 2-s2.0-85169840330 e12468 en NRF-CRP26-2021-0004 InfoMat © 2023 The Authors. InfoMat published by UESTC and John Wiley & Sons Australia, Ltd. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials
Dirac Semimetal
Optical Nonlinearities
spellingShingle Engineering::Materials
Dirac Semimetal
Optical Nonlinearities
Hemmat, Minoosh
Ayari, Sabrine
Micica, Martin
Vergnet, Hadrien
Guo, Shasha
Arfaoui, Mehdi
Yu, Xuechao
Vala, Daniel
Wright, Adrien
Postava, Kamil
Mangeney, Juliette
Carosella, Francesca
Jaziri, Sihem
Wang, Qi Jie
Liu, Zheng
Tignon, Jerome
Ferreira, Robson
Baudin, Emmanuel
Dhillon, Sukhdeep
Layer-controlled nonlinear terahertz valleytronics in two-dimensional semimetal and semiconductor PtSe₂
description Platinum diselenide ((Formula presented.)) is a promising two-dimensional (2D) material for the terahertz (THz) range as, unlike other transition metal dichalcogenides (TMDs), its bandgap can be uniquely tuned from a semiconductor in the near-infrared to a semimetal with the number of atomic layers. This gives the material unique THz photonic properties that can be layer-engineered. Here, we demonstrate that a controlled THz nonlinearity—tuned from monolayer to bulk (Formula presented.) —can be realized in wafer size polycrystalline (Formula presented.) through the generation of ultrafast photocurrents and the engineering of the bandstructure valleys. This is combined with the (Formula presented.) layer interaction with the substrate for a broken material centrosymmetry, permitting a second order nonlinearity. Further, we show layer dependent circular dichroism, where the sign of the ultrafast currents and hence the phase of the emitted THz pulse can be controlled through the excitation of different bandstructure valleys. In particular, we show that a semimetal has a strong dichroism that is absent in the monolayer and few layer semiconducting limit. The microscopic origins of this TMD bandstructure engineering are highlighted through detailed DFT simulations, and shows the circular dichroism can be controlled when (Formula presented.) becomes a semimetal and when the K-valleys can be excited. As well as showing that (Formula presented.) is a promising material for THz generation through layer controlled optical nonlinearities, this work opens up a new class of circular dichroism materials beyond the monolayer limit that has been the case of traditional TMDs, and impacting a range of domains from THz valleytronics, THz spintronics to harmonic generation.
author2 School of Materials Science and Engineering
author_facet School of Materials Science and Engineering
Hemmat, Minoosh
Ayari, Sabrine
Micica, Martin
Vergnet, Hadrien
Guo, Shasha
Arfaoui, Mehdi
Yu, Xuechao
Vala, Daniel
Wright, Adrien
Postava, Kamil
Mangeney, Juliette
Carosella, Francesca
Jaziri, Sihem
Wang, Qi Jie
Liu, Zheng
Tignon, Jerome
Ferreira, Robson
Baudin, Emmanuel
Dhillon, Sukhdeep
format Article
author Hemmat, Minoosh
Ayari, Sabrine
Micica, Martin
Vergnet, Hadrien
Guo, Shasha
Arfaoui, Mehdi
Yu, Xuechao
Vala, Daniel
Wright, Adrien
Postava, Kamil
Mangeney, Juliette
Carosella, Francesca
Jaziri, Sihem
Wang, Qi Jie
Liu, Zheng
Tignon, Jerome
Ferreira, Robson
Baudin, Emmanuel
Dhillon, Sukhdeep
author_sort Hemmat, Minoosh
title Layer-controlled nonlinear terahertz valleytronics in two-dimensional semimetal and semiconductor PtSe₂
title_short Layer-controlled nonlinear terahertz valleytronics in two-dimensional semimetal and semiconductor PtSe₂
title_full Layer-controlled nonlinear terahertz valleytronics in two-dimensional semimetal and semiconductor PtSe₂
title_fullStr Layer-controlled nonlinear terahertz valleytronics in two-dimensional semimetal and semiconductor PtSe₂
title_full_unstemmed Layer-controlled nonlinear terahertz valleytronics in two-dimensional semimetal and semiconductor PtSe₂
title_sort layer-controlled nonlinear terahertz valleytronics in two-dimensional semimetal and semiconductor ptse₂
publishDate 2023
url https://hdl.handle.net/10356/171573
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