Electrically tunable terahertz resonance in antiferromagnetic NiO/Pt heterostructures

Antiferromagnets that facilitate terahertz (THz) spin resonances have the potential to revolutionize high-speed electronics at the nanoscale. The electrical control of THz spin resonances is the key to such THz devices; however, experimental demonstration has remained elusive. In this work, we demon...

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Main Authors: Yang, Dongsheng, Wen, Wen, Xu, Chang, Lee, Kyusup, Yu, Ting, Yang, Hyunsoo
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2023
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Online Access:https://hdl.handle.net/10356/171745
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1717452023-11-13T15:34:58Z Electrically tunable terahertz resonance in antiferromagnetic NiO/Pt heterostructures Yang, Dongsheng Wen, Wen Xu, Chang Lee, Kyusup Yu, Ting Yang, Hyunsoo School of Physical and Mathematical Sciences Science::Physics Antiferromagnetics Electrically Tunable Antiferromagnets that facilitate terahertz (THz) spin resonances have the potential to revolutionize high-speed electronics at the nanoscale. The electrical control of THz spin resonances is the key to such THz devices; however, experimental demonstration has remained elusive. In this work, we demonstrate electrically tunable THz spin resonance in an antiferromagnetic NiO/Pt heterostructure by employing both low-wavenumber Raman and continuous-wave THz spectroscopy techniques. A redshift of over 100 GHz in the NiO spin resonance frequency of around 1 THz is observed by applying charge currents along the adjacent Pt layer. A control experiment with NiO/Cu and temperature-dependent measurement confirm that the dominant tuning mechanism is Joule heating. Finally, a prototype device is designed to achieve an electrical control of THz transmission at dual channels of 0.96 and 1 THz, leading to a Q factor of 56. This work opens up the possibility for the implementation of tunable THz devices utilizing antiferromagnetic spin resonance. Published version 2023-11-07T00:49:18Z 2023-11-07T00:49:18Z 2023 Journal Article Yang, D., Wen, W., Xu, C., Lee, K., Yu, T. & Yang, H. (2023). Electrically tunable terahertz resonance in antiferromagnetic NiO/Pt heterostructures. Physical Review Applied, 20(1), 014023-1-014023-7. https://dx.doi.org/10.1103/PhysRevApplied.20.014023 2331-7019 https://hdl.handle.net/10356/171745 10.1103/PhysRevApplied.20.014023 2-s2.0-85165086715 1 20 014023-1 014023-7 en Physical Review Applied © 2023 American Physical Society. All rights reserved. This article may be downloaded for personal use only. Any other use requires prior permission of the copyright holder. The Version of Record is available online at http://doi.org/10.1103/PhysRevApplied.20.014023 application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Science::Physics
Antiferromagnetics
Electrically Tunable
spellingShingle Science::Physics
Antiferromagnetics
Electrically Tunable
Yang, Dongsheng
Wen, Wen
Xu, Chang
Lee, Kyusup
Yu, Ting
Yang, Hyunsoo
Electrically tunable terahertz resonance in antiferromagnetic NiO/Pt heterostructures
description Antiferromagnets that facilitate terahertz (THz) spin resonances have the potential to revolutionize high-speed electronics at the nanoscale. The electrical control of THz spin resonances is the key to such THz devices; however, experimental demonstration has remained elusive. In this work, we demonstrate electrically tunable THz spin resonance in an antiferromagnetic NiO/Pt heterostructure by employing both low-wavenumber Raman and continuous-wave THz spectroscopy techniques. A redshift of over 100 GHz in the NiO spin resonance frequency of around 1 THz is observed by applying charge currents along the adjacent Pt layer. A control experiment with NiO/Cu and temperature-dependent measurement confirm that the dominant tuning mechanism is Joule heating. Finally, a prototype device is designed to achieve an electrical control of THz transmission at dual channels of 0.96 and 1 THz, leading to a Q factor of 56. This work opens up the possibility for the implementation of tunable THz devices utilizing antiferromagnetic spin resonance.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Yang, Dongsheng
Wen, Wen
Xu, Chang
Lee, Kyusup
Yu, Ting
Yang, Hyunsoo
format Article
author Yang, Dongsheng
Wen, Wen
Xu, Chang
Lee, Kyusup
Yu, Ting
Yang, Hyunsoo
author_sort Yang, Dongsheng
title Electrically tunable terahertz resonance in antiferromagnetic NiO/Pt heterostructures
title_short Electrically tunable terahertz resonance in antiferromagnetic NiO/Pt heterostructures
title_full Electrically tunable terahertz resonance in antiferromagnetic NiO/Pt heterostructures
title_fullStr Electrically tunable terahertz resonance in antiferromagnetic NiO/Pt heterostructures
title_full_unstemmed Electrically tunable terahertz resonance in antiferromagnetic NiO/Pt heterostructures
title_sort electrically tunable terahertz resonance in antiferromagnetic nio/pt heterostructures
publishDate 2023
url https://hdl.handle.net/10356/171745
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