Flexible silicon (Si) devices for various applications in internet of things (IoT) era

• Main Author: Hee, Jing Shen
• Other Authors: Kim Munho
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2023
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/172461
• Institution: Nanyang Technological University

In today's tech-savvy world, there's a lot of buzz around flexible electronic gadgets like thin film transistors and photodetectors, especially with the rise of the Internet of Things (IoT). Silicon (Si) semiconductor properties are crucial to the operation of diverse electronic devices. A noteworthy development in this context is the advent of semiconductor Si nanomembranes (NMs), which are transferable, self-supporting thin films known for their exceptional flexibility. In the scope of this project, we will delve into the examination of Si materials, NMs, and diodes. Additionally, Si NMs will undergo a transfer process onto a flexible Polyethylene Terephthalate (PET) substrate, achieved through positive lithography and dry etching techniques. To further manipulate the bandgap characteristics, both compressive and tensile straining were employed, and their effects were subsequently scrutinized through Raman spectroscopy. Additionally, the integration of Gold (Au) and Titanium (Ti) into the PET substrate led to the development of Metal-Semiconductor-Metal Photodetectors (MSM PD). The degradation pathway of these devices was studied by applying a bias voltage, with the resultant I-V characteristic graph captured and analyzed using microscopy. This paper serves as an exposition of a comprehensive research investigation into Si materials, NMs, the transfer-printing of Si NMs onto flexible substrates, the intricate fabrication process of Si NMs and associated devices, and the characterization of Si diodes through the utilization of Raman Spectroscopy and a current-voltage measurement setup.