Enhancement of out-of-plane spin-orbit torque by interfacial modification
Spin-orbit torque (SOT)-induced switching of perpendicular magnetization in the absence of magnetic field is crucial for the application of SOT-based spintronic devices. Recent works have demonstrated that the low-symmetry crystal structure in CuPt/CoPt can give rise to an out-of-plane (OOP) spin to...
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sg-ntu-dr.10356-1728832023-12-29T15:46:10Z Enhancement of out-of-plane spin-orbit torque by interfacial modification Zhao, Tieyang Liu, Liang Zhou, Chenghang Zheng, Zhenyi Li, Huihui Xie, Qidong Yao, Bingqing Ren, Lizhu Chai, Jianwei Dong, Zhili Zhao, Chao Chen, Jingsheng School of Materials Science and Engineering Engineering::Materials Interfacial Modification Out-of-Plane Spin Torque Spin-orbit torque (SOT)-induced switching of perpendicular magnetization in the absence of magnetic field is crucial for the application of SOT-based spintronic devices. Recent works have demonstrated that the low-symmetry crystal structure in CuPt/CoPt can give rise to an out-of-plane (OOP) spin torque and lead to deterministic magnetization switching without an external field. However, it is essential to improve OOP effective field for the efficient switching. In this work, the impact of interface oxidation on the generation of OOP effective field in a CuPt/ferromagnet heterostructure is systematically studied. By introducing an oxidized CuPt surface, it is found that the field-free switching performance shows remarkable improvement. OOP effective field measurement indicates that the oxidation treatment can enhance the OOP effective field by more than two times. It is also demonstrated that this oxidation-induced OOP SOT efficiency enhancement is independent of the device shapes, magnetic materials, or magnetization easy axis. This work contributes to improve the performance of SOT devices and provides an effective fabrication guidance for future spintronic devices that utilize OOP SOT. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) Published version The research was supported by the Singapore Ministry of Education (Grant Mos. MOE2018-T2-2-043, MOE-T2EP50121-0011, and MOE Tier 1: 22-4888-A0001), A*STAR AME IRG A1983c0036, and A*STAR RIE2020 Advanced Manufacturing and Engineering (AME) Programmatic Grant A20G9b0135. 2023-12-27T08:00:58Z 2023-12-27T08:00:58Z 2023 Journal Article Zhao, T., Liu, L., Zhou, C., Zheng, Z., Li, H., Xie, Q., Yao, B., Ren, L., Chai, J., Dong, Z., Zhao, C. & Chen, J. (2023). Enhancement of out-of-plane spin-orbit torque by interfacial modification. Advanced Materials, 35(12), e2208954-. https://dx.doi.org/10.1002/adma.202208954 0935-9648 https://hdl.handle.net/10356/172883 10.1002/adma.202208954 36647621 2-s2.0-85148025901 12 35 e2208954 en MOE2018-T2-2-043 MOE-T2EP50121-0011 MOE Tier 1: 22-4888-A0001 A1983c0036 A20G9b0135 Advanced Materials © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made. application/pdf |
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Engineering::Materials Interfacial Modification Out-of-Plane Spin Torque Zhao, Tieyang Liu, Liang Zhou, Chenghang Zheng, Zhenyi Li, Huihui Xie, Qidong Yao, Bingqing Ren, Lizhu Chai, Jianwei Dong, Zhili Zhao, Chao Chen, Jingsheng Enhancement of out-of-plane spin-orbit torque by interfacial modification |
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Spin-orbit torque (SOT)-induced switching of perpendicular magnetization in the absence of magnetic field is crucial for the application of SOT-based spintronic devices. Recent works have demonstrated that the low-symmetry crystal structure in CuPt/CoPt can give rise to an out-of-plane (OOP) spin torque and lead to deterministic magnetization switching without an external field. However, it is essential to improve OOP effective field for the efficient switching. In this work, the impact of interface oxidation on the generation of OOP effective field in a CuPt/ferromagnet heterostructure is systematically studied. By introducing an oxidized CuPt surface, it is found that the field-free switching performance shows remarkable improvement. OOP effective field measurement indicates that the oxidation treatment can enhance the OOP effective field by more than two times. It is also demonstrated that this oxidation-induced OOP SOT efficiency enhancement is independent of the device shapes, magnetic materials, or magnetization easy axis. This work contributes to improve the performance of SOT devices and provides an effective fabrication guidance for future spintronic devices that utilize OOP SOT. |
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School of Materials Science and Engineering |
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School of Materials Science and Engineering Zhao, Tieyang Liu, Liang Zhou, Chenghang Zheng, Zhenyi Li, Huihui Xie, Qidong Yao, Bingqing Ren, Lizhu Chai, Jianwei Dong, Zhili Zhao, Chao Chen, Jingsheng |
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Article |
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Zhao, Tieyang Liu, Liang Zhou, Chenghang Zheng, Zhenyi Li, Huihui Xie, Qidong Yao, Bingqing Ren, Lizhu Chai, Jianwei Dong, Zhili Zhao, Chao Chen, Jingsheng |
author_sort |
Zhao, Tieyang |
title |
Enhancement of out-of-plane spin-orbit torque by interfacial modification |
title_short |
Enhancement of out-of-plane spin-orbit torque by interfacial modification |
title_full |
Enhancement of out-of-plane spin-orbit torque by interfacial modification |
title_fullStr |
Enhancement of out-of-plane spin-orbit torque by interfacial modification |
title_full_unstemmed |
Enhancement of out-of-plane spin-orbit torque by interfacial modification |
title_sort |
enhancement of out-of-plane spin-orbit torque by interfacial modification |
publishDate |
2023 |
url |
https://hdl.handle.net/10356/172883 |
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1787153692804251648 |