Gate-tunable anomalous Hall effect in Bernal tetralayer graphene

Gate-tunable anomalous Hall effect in Bernal tetralayer graphene

Large spin-orbit coupling is often thought to be critical in realizing magnetic order-locked charge transport such as the anomalous Hall effect (AHE). Recently, artificial stacks of two-dimensional materials, e.g., magic-angle twisted bilayer graphene on hexagonal boron-nitride heterostructures and...

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Bibliographic Details
Main Authors: Chen, Hao, Arora, Arpit, Song, Justin Chien Wen, Loh, Kian Ping
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2024
Subjects:
Science::Physics
Bilayer Membrane
Crystal Structure
Online Access:https://hdl.handle.net/10356/172983
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/172983

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