A polar-modulation-based cryogenic transmon qubit state controller in 28 nm bulk CMOS for superconducting quantum computing

• Main Authors: Guo, Yanshu, Liu, Qichun, Li, Yaoyu, Huang, Wenqiang, Tian, Tian, Zhang, Siqi, Wu, Nan, Tan, Songyao, Deng, Ning, Wang, Zhihua, Jiang, Hanjun, Li, Tiefu, Zheng, Yuanjin
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2024
• Subjects: Engineering; Polar Modulation; Qubit Control
• Online Access: https://hdl.handle.net/10356/173464
• Institution: Nanyang Technological University

This article presents a cryogenic transmon qubit state controller integrated circuit (IC) working at a temperature of 3.5 K for superconducting quantum computing (QC) applications. The qubit state controller IC comprises a polar-modulation-based XY -path driver and a current-steering digital-to-analog converter (DAC)-based {Z} -path driver. To generate the XY -path driving pulse with arbitrary envelopes in the frequency range of 4-6 GHz, a switched-capacitor digital power amplifier (DPA) is adopted for amplitude modulation, and an injection locking local oscillator (IL-LO) with a constant-slope digital-to-time-converter (DTC) is used for open-loop phase modulation. With the proposed DPA and IL-LO, the controller can control a qubit with a compact architecture. Fabricated in the 28-nm bulk CMOS process, the controller IC occupies an active die area of 0.9 mm2 per driving channel. The controller achieves a spurious-free dynamic range (SFDR) of 40 dB for a 1 GS/s XY -path driver and an SFDR of 48 dB for a 1 GS/s {Z} -path driver at 3.5 K. The controller consumes a power of 13.7 mW per qubit. A Rabi experiment at 13.9 MHz, a Ramsey experiment at 3.09 MHz, and a T1 experiment at 15.87 μs are conducted using the presented controller IC at 3.5 K to control the transmon superconducting qubit at 10 mK directly.