Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector

Short-term plasticity plays a crucial role in the hardware implementation of artificial neural networks (ANN) as it enables temporal information processing capability. However, the short-term plasticity feature is rather challenging to reproduce from a single non-volatile resistive random-access mem...

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Main Author: Chee, Mun Yin
Other Authors: Lew Wen Siang
Format: Thesis-Doctor of Philosophy
Language:English
Published: Nanyang Technological University 2024
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Online Access:https://hdl.handle.net/10356/173840
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spelling sg-ntu-dr.10356-1738402024-04-09T03:58:57Z Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector Chee, Mun Yin Lew Wen Siang School of Physical and Mathematical Sciences WenSiang@ntu.edu.sg Physics Short-term plasticity Short-term plasticity plays a crucial role in the hardware implementation of artificial neural networks (ANN) as it enables temporal information processing capability. However, the short-term plasticity feature is rather challenging to reproduce from a single non-volatile resistive random-access memory (RRAM) component due to its requirement for a certain degree of volatility. Nonetheless, if the selector in one selector-one RRAM (1S1R) integration demonstrates short-term plasticity, it enables the 1S1R device to perform temporal information processing even in the absence of short-term plasticity in RRAM. In this thesis, an exponential selector of Pt/TiO2/Pt structure is introduced to demonstrate the short-term plasticity feature, which is shown to be dependent on the electrode-oxide interface through plasma treatment, and a microscopic model is proposed to explain the observed feature. Thereafter, the short-term plasticity and nonlinearity of the exponential selector are tuned by modulating the oxygen vacancy defects in the TiO2 layer. As the concentration of oxygen vacancy defects increases, the dominant conduction mechanism of the exponential selector transitions from Schottky emission to Poole-Frenkel emission. Additionally, a 1S1R synaptic device is developed based on the Pt/TiO2/Pt exponential selector and a Pt/HfO2/Ti RRAM structure. The Pt/TiO2/Pt selector with short-term plasticity is integrated not only to suppress the sneak current but also to enable the temporal information processing feature, while the Pt/HfO2/Ti RRAM structure enables the long-term memory capability of the 1S1R synapse. Frequency-dependent multilevel switching is experimentally demonstrated in the 1S1R synaptic device, exhibiting the capability of temporal information processing. Furthermore, a 2x2 crossbar array based on the developed 1S1R device is characterised under the worst-case scenario, demonstrating the potential of using this 1S1R synaptic device in the hardware implementation of ANN. Doctor of Philosophy 2024-03-01T05:10:01Z 2024-03-01T05:10:01Z 2023 Thesis-Doctor of Philosophy Chee, M. Y. (2023). Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/173840 https://hdl.handle.net/10356/173840 10.32657/10356/173840 en This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License (CC BY-NC 4.0). application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Physics
Short-term plasticity
spellingShingle Physics
Short-term plasticity
Chee, Mun Yin
Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector
description Short-term plasticity plays a crucial role in the hardware implementation of artificial neural networks (ANN) as it enables temporal information processing capability. However, the short-term plasticity feature is rather challenging to reproduce from a single non-volatile resistive random-access memory (RRAM) component due to its requirement for a certain degree of volatility. Nonetheless, if the selector in one selector-one RRAM (1S1R) integration demonstrates short-term plasticity, it enables the 1S1R device to perform temporal information processing even in the absence of short-term plasticity in RRAM. In this thesis, an exponential selector of Pt/TiO2/Pt structure is introduced to demonstrate the short-term plasticity feature, which is shown to be dependent on the electrode-oxide interface through plasma treatment, and a microscopic model is proposed to explain the observed feature. Thereafter, the short-term plasticity and nonlinearity of the exponential selector are tuned by modulating the oxygen vacancy defects in the TiO2 layer. As the concentration of oxygen vacancy defects increases, the dominant conduction mechanism of the exponential selector transitions from Schottky emission to Poole-Frenkel emission. Additionally, a 1S1R synaptic device is developed based on the Pt/TiO2/Pt exponential selector and a Pt/HfO2/Ti RRAM structure. The Pt/TiO2/Pt selector with short-term plasticity is integrated not only to suppress the sneak current but also to enable the temporal information processing feature, while the Pt/HfO2/Ti RRAM structure enables the long-term memory capability of the 1S1R synapse. Frequency-dependent multilevel switching is experimentally demonstrated in the 1S1R synaptic device, exhibiting the capability of temporal information processing. Furthermore, a 2x2 crossbar array based on the developed 1S1R device is characterised under the worst-case scenario, demonstrating the potential of using this 1S1R synaptic device in the hardware implementation of ANN.
author2 Lew Wen Siang
author_facet Lew Wen Siang
Chee, Mun Yin
format Thesis-Doctor of Philosophy
author Chee, Mun Yin
author_sort Chee, Mun Yin
title Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector
title_short Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector
title_full Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector
title_fullStr Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector
title_full_unstemmed Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector
title_sort frequency-dependent redox-based 1s1r synapse with a short-term plasticity tio2-based exponential selector
publisher Nanyang Technological University
publishDate 2024
url https://hdl.handle.net/10356/173840
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