High-speed 4 × 4 silicon photonic plasma dispersive switch, operating at the 2 µm waveband

The escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-μm waveband as a prospective window for emerging applications in optical communication. This has initiated an ecosystem of silicon photonic components in the...

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Main Authors: Wang, Jiawei, Sia, Brian Jia Xu, Li, Xiang, Guo, Xin, Wang, Wanjun, Qiao, Zhongliang, Littlejohns, Callum G., Liu, Chongyang, Reed, Graham T., Rusli, Wang, Hong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2024
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Online Access:https://hdl.handle.net/10356/174000
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1740002024-03-15T15:40:00Z High-speed 4 × 4 silicon photonic plasma dispersive switch, operating at the 2 µm waveband Wang, Jiawei Sia, Brian Jia Xu Li, Xiang Guo, Xin Wang, Wanjun Qiao, Zhongliang Littlejohns, Callum G. Liu, Chongyang Reed, Graham T. Rusli Wang, Hong School of Electrical and Electronic Engineering Temasek Laboratories @ NTU Engineering Capacity constraints Data bandwidth; The escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-μm waveband as a prospective window for emerging applications in optical communication. This has initiated an ecosystem of silicon photonic components in the region driven by CMOS compatibility, low cost, high efficiency and potential for large-scale integration. In this study, we demonstrate a plasma dispersive 4 × 4 photonic switch operating at the 2-μm waveband with the highest switching speed. The demonstrated switch operates across a 45-nm bandwidth, with 10-90% rise and 90-10% fall time of 1.78 ns and 3.02 ns respectively. In a 4 × 4 implementation, crosstalk below -15 dB and power consumption lower than 19.15 mW across all 16 optical paths are indicated. This result brings high-speed optical switching to the portfolio of devices at the promising waveband. Ministry of Education (MOE) Published version Ministry of Education - Singapore (MOE-T2EP50121-0005). 2024-03-11T06:05:27Z 2024-03-11T06:05:27Z 2023 Journal Article Wang, J., Sia, B. J. X., Li, X., Guo, X., Wang, W., Qiao, Z., Littlejohns, C. G., Liu, C., Reed, G. T., Rusli & Wang, H. (2023). High-speed 4 × 4 silicon photonic plasma dispersive switch, operating at the 2 µm waveband. Optics Express, 31(20), 33548-33564. https://dx.doi.org/10.1364/OE.499781 1094-4087 https://hdl.handle.net/10356/174000 10.1364/OE.499781 37859134 2-s2.0-85174252425 20 31 33548 33564 en MOE-T2EP50121-0005 Optics Express © 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering
Capacity constraints
Data bandwidth;
spellingShingle Engineering
Capacity constraints
Data bandwidth;
Wang, Jiawei
Sia, Brian Jia Xu
Li, Xiang
Guo, Xin
Wang, Wanjun
Qiao, Zhongliang
Littlejohns, Callum G.
Liu, Chongyang
Reed, Graham T.
Rusli
Wang, Hong
High-speed 4 × 4 silicon photonic plasma dispersive switch, operating at the 2 µm waveband
description The escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-μm waveband as a prospective window for emerging applications in optical communication. This has initiated an ecosystem of silicon photonic components in the region driven by CMOS compatibility, low cost, high efficiency and potential for large-scale integration. In this study, we demonstrate a plasma dispersive 4 × 4 photonic switch operating at the 2-μm waveband with the highest switching speed. The demonstrated switch operates across a 45-nm bandwidth, with 10-90% rise and 90-10% fall time of 1.78 ns and 3.02 ns respectively. In a 4 × 4 implementation, crosstalk below -15 dB and power consumption lower than 19.15 mW across all 16 optical paths are indicated. This result brings high-speed optical switching to the portfolio of devices at the promising waveband.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Wang, Jiawei
Sia, Brian Jia Xu
Li, Xiang
Guo, Xin
Wang, Wanjun
Qiao, Zhongliang
Littlejohns, Callum G.
Liu, Chongyang
Reed, Graham T.
Rusli
Wang, Hong
format Article
author Wang, Jiawei
Sia, Brian Jia Xu
Li, Xiang
Guo, Xin
Wang, Wanjun
Qiao, Zhongliang
Littlejohns, Callum G.
Liu, Chongyang
Reed, Graham T.
Rusli
Wang, Hong
author_sort Wang, Jiawei
title High-speed 4 × 4 silicon photonic plasma dispersive switch, operating at the 2 µm waveband
title_short High-speed 4 × 4 silicon photonic plasma dispersive switch, operating at the 2 µm waveband
title_full High-speed 4 × 4 silicon photonic plasma dispersive switch, operating at the 2 µm waveband
title_fullStr High-speed 4 × 4 silicon photonic plasma dispersive switch, operating at the 2 µm waveband
title_full_unstemmed High-speed 4 × 4 silicon photonic plasma dispersive switch, operating at the 2 µm waveband
title_sort high-speed 4 × 4 silicon photonic plasma dispersive switch, operating at the 2 µm waveband
publishDate 2024
url https://hdl.handle.net/10356/174000
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