Leakage function in magnetic domain wall based artificial neuron using stray field

• Main Authors: Mah, William Wai Lum, Chan, Jianpeng, Ganesh K. R., V. B. Naik, Piramanayagam, S. N.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2024
• Subjects: Physics; Ferromagnetic materials; Neuromorphic engineering; Interlayer exchange coupling; Artificial intelligence
• Online Access: https://hdl.handle.net/10356/174089
• Institution: Nanyang Technological University

Recently, brain-inspired neuromorphic computing (NC) has been gaining traction as it is expected to be more power efficient and a more suitable platform for artificial intelligence. Artificial neurons and synapses are the main components of the NC architecture, and there have been many studies on artificial synapses. Experimental studies on artificial neurons that should exhibit the leaky integrate-and-fire properties are lacking due to the challenges in fabricating such a device. In this work, we have fabricated domain wall based devices consisting of (Co/Pt)n free and hard layers without interlayer exchange coupling, whereby the stray field from the hard layer triggers the automatic leakage function in the free layer. In addition, devices of smaller width were able to fully reset, showing the potential to scale down to smaller sizes. This experimental proof of concept provided evidence that the proposed neuron design has potential applications in NC. Further studies were performed via micromagnetic simulations to understand the role of the width of the device, thickness, and saturation magnetization of the hard layer.