Investigation of the dynamics of NbOx-based threshold switching devices for next-generation computing and wearable electronics
As the current CMOS-based memory technologies face challenges to scale down to 10 nm node and beyond, scalable memory devices are highly sought after. The emergence of Resistive Random Access Memory (ReRAM) as a highly promising research area for next-generation non-volatile memory has garnered sign...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis-Doctor of Philosophy |
| Language: | English |
| Published: |
Nanyang Technological University
2024
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/174211 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |